Circuit reliability

Abstract: Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC is based on substrate current Isub, which becomes increasingly problematic with technology scaling as various leakage components dominate Isub. In this paper, we present a unified approach that directly predicts the change of key transistor parameters under various process and design conditions for both NBTI and CHC effects. Using the general reaction-diffusion model and the concept of surface potential, the proposed method continuously captures the performance degradation across subthreshold and strong inversion regions. Models are comprehensively verified with an industrial 65-nm technology. By benchmarking the prediction of circuit performance degradation with the measured ring oscillator data and simulations of an amplifier, we demonstrate that the proposed method very well predicts the degradation. For 65-nm technology, NBTI is the dominant reliability concern, and the impact of CHC on circuit performance is relatively small.

Abstract: The testability of a digital circuit is directly related to the difficulty of controlling and observing the logical values of internal nodes from circuit inputs and outputs, respectively. This paper presents a method for analyzing digital circuits in terms of six functions which characterize combinational and sequential controllability and observability.

Abstract: In this paper key design issues and considerations of a low-cost 3-D Cu-TSV technology are investigated. The impact of TSV on BEOL interconnect reliability is limited, no failures have been observed. The impact of TSV stress on MOS devices causes shifts, further analysis is required to understand their importance. Thermal hot spots in 3-D chip stacks cause temperature increases three times higher than in 2-D chips, necessitating a careful thermal floorplanning to avoid thermal failures. We have monitored for ESD during 3-D processing and have found no events take place, however careful further monitoring is required. The noise coupling between two tiers in a 3-D chip-stack is 20 dB lower than in a 2-D SoC, opening opportunities for increased mixed signal system performance. The impact on digital circuit performance of TSVs is accurately modeled with the presented RC model and digital gates can directly drive signals through TSVs at high speed and low power. Experimental results of a 3-D Network-on-Chip implementation demonstrate that the NoC concept can be extended from 2-D SoC to 3-D SoCs at low area (0.018 ) and power (3%) overhead.

Abstract: A 128-bit, 1.6 pJ/bit, 96% stable chip ID generation circuit utilizing process variations is designed in a 0.13 mum CMOS process. The circuit consumes 162 nW from a 1 V supply at low readout frequencies and 1.6 muW at 1 Mb/s. Cross-coupled logic gates were employed to simultaneously generate, amplify, and digitize the random circuit offset to create a stable unique digital chip ID code. A thorough statistical analysis is presented in order to explore the ID circuit reliability and stability. Two ID generators with different layout techniques were designed and fabricated to provide a performance comparison of power consumption, ID stability, and ID statistical robustness.