TL;DR: Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.
Abstract: The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.
TL;DR: In this article, a modified nodal analysis (MNA) method is proposed, which retains the simplicity and other advantages of nodal Analysis while removing its limitations, and a simple and effective pivoting scheme is also given.
Abstract: The nodal method has been widely used for formulating circuit equations in computer-aided network analysis and design programs. However, several limitations exist in this method including the inability to process voltage sources and current-dependent circuit elements in a simple and efficient manner. A modified nodal analysis (MNA) method is proposed here which retains the simplicity and other advantages of nodal analysis while removing its limitations. A simple and effective pivoting scheme is also given. Numerical examples are used to compare the MNA method with the tableau method. Favorable results are observed for the MNA method in terms of the dimension, number of nonzeros, and fill-ins for comparable circuit matrices.
TL;DR: This paper will concern you to try reading combinatorial algorithms for integrated circuit layout as one of the reading material to finish quickly.
Abstract: Feel lonely? What about reading books? Book is one of the greatest friends to accompany while in your lonely time. When you have no friends and activities somewhere and sometimes, reading book can be a great choice. This is not only for spending the time, it will increase the knowledge. Of course the b=benefits to take will relate to what kind of book that you are reading. And now, we will concern you to try reading combinatorial algorithms for integrated circuit layout as one of the reading material to finish quickly.
TL;DR: This paper describes a circuit transformation called retiming in which registers are added at some points in a circuit and removed from others in such a way that the functional behavior of the circuit as a whole is preserved.
Abstract: This paper describes a circuit transformation calledretiming in which registers are added at some points in a circuit and removed from others in such a way that the functional behavior of the circuit as a whole is preserved. We show that retiming can be used to transform a given synchronous circuit into a more efficient circuit under a variety of different cost criteria. We model a circuit as a graph in which the vertex setV is a collection of combinational logic elements and the edge setE is the set of interconnections, each of which may pass through zero or more registers. We give anO(?VźE?lg?V?) algorithm for determining an equivalent retimed circuit with the smallest possible clock period. We show that the problem of determining an equivalent retimed circuit with minimum state (total number of registers) is polynomial-time solvable. This result yields a polynomial-time optimal solution to the problem of pipelining combinational circuitry with minimum register cost. We also give a chacterization of optimal retiming based on an efficiently solvable mixed-integer linear-programming problem.
TL;DR: A new paradigm of predictive MOSFET and interconnect modeling is introduced to specifically address SPICE compatible parameters for future technology generations and comparisons with published data and 2D simulations are used to verify this predictive technology model.
Abstract: A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L/sub eff/, T/sub ok/, V/sub t/, R/sub dsw/ and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 /spl mu/m and 0.13 /spl mu/m technology nodes with L/sub eff/ down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.