Topic
Buffered oxide etch
About: Buffered oxide etch is a research topic. Over the lifetime, 1071 publications have been published within this topic receiving 28062 citations.
Papers published on a yearly basis
1 / 2
Papers
TL;DR: In this paper, the etch rates of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared.
Abstract: Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on Au, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyimide. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H/sub 2/O vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF/sub 6/ plasma, SF/sub 6/+O/sub 2/ plasma, CF/sub 4/ plasma, CF/sub 4/+O/sub 2/ plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported. Sample preparation and information about the etches is given.
1,377 citations
TL;DR: In this article, the topmost oxide layer was observed to hydroxylate after immersion in water, which was used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution.
Abstract: In recent years, well-defined and nearly perfect single crystal surfaces of oxide perovskites have become increasingly important. A single terminated surface is a prerequisite for reproducible thin film growth and fundamental growth studies. In this work, atomic and lateral force microscopy have been used to display different terminations of SrTiO3. We observe hydroxylation of the topmost SrO layer after immersion of SrTiO3 in water, which is used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution. We reproducibly obtain perfect and single terminated surfaces, irrespective of the initial state of polished surfaces and the pH value of the HF solution. This approach to the problem might be used for a variety of multi-component oxide single crystals. True two-dimensional reflection high-energy electron diffraction intensity oscillations are observed during homo epitaxial growth using pulsed laser deposition on these surfaces.
814 citations
TL;DR: In this paper, the acceleration effect of ions with moderate energies (10 to 20 eV), using a microwave ECR (Electron Cyclotron Resonance) excited plasma, and a plasma stream extraction onto the specimen table by a divergent magnetic field method.
Abstract: The plasma deposition apparatus developed in this study can realize a deposition of dense and high quality thin films, such as Si3N4 and SiO2, without the need for substrate heating. It does this by enhancing the plasma excitation efficiency at low gas pressures (10-4 Torr) and by the acceleration effect of ions with moderate energies (10 to 20 eV), using a microwave ECR (Electron Cyclotron Resonance) excited plasma, and a plasma stream extraction onto the specimen table by a divergent magnetic field method. The Si3N4 and SiO2 films deposited are comparable to those prepared by high temperature CVD and thermal oxidation, respectively, in evaluations such as by buffered HF solution etch rate measurement.
402 citations
Patent•
28 Apr 1994TL;DR: In this article, a resist layer is formed on an oxide layer on a substrate, and a photosensitive layer is created on the resist layer and patterned to expose regions of the oxide layer to be removed.
Abstract: A method of etching an oxide layer is disclosed. First, a resist layer is formed on an oxide layer on a substrate. Next, a photosensitive layer is formed on the oxide layer and patterned to expose regions of the oxide layer to be removed. The exposed regions may overlie a nitride layer, and may overlie a structure such as a polysilicon gate. The etch is performed such that polymer deposits on the photosensitive layer, thus eliminating interactions between the photosensitive layer and the plasma. In this way, a simple etch process allows for good control of the etch, resulting in reduced aspect ratio dependent etch effects, high oxide:nitride selectivity, and good wall angle profile control.
343 citations
TL;DR: In this article, a ternary liquid etchant solution for silicon, consisting of hydrazine, iso-2propyl alcohol (IPA), and water has been studied in some detail.
Abstract: A ternary liquid etchant solution for silicon, consisting of hydrazine, iso‐2‐propyl alcohol (IPA), and water has been studied in some detail. In common with other anisotropic etchants reported in the literature, marked dependence of dissolution rate on the crystal orientation of the etched surface has been observed with a low rate of attack on (111) planes. In contrast to other formulations, this etch attacks neither silicon dioxide nor aluminium vacuum‐deposited films, either of which may be used as a very convenient in‐contact masking medium for the engraving of intricate shapes on an appropriately oriented silicon substrate. The experimental study indicates that the etch velocity is a maximum for (211) planes, which accounts for the rounding of convex corners frequently observed when engraving regular shapes in silicon with anisotropic etches. The optimum etch solution is an equimolar mixture of NH2 and H2O.
321 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2024 | 1 |
| 2023 | 2 |
| 2022 | 2 |
| 2021 | 1 |
| 2020 | 5 |
| 2019 | 4 |