BSIM

Abstract: 1. SPICE Modeling and the Dominance of CMOS Technology. 2. SPICE Modeling and the Formalism of Model Building. 3. The Semiconductor Physics of MOS Structures. 4. A Comparison of Analytical and Numerical Results. 5. The Level 1 Model. 6. The Level 2 Model. 7. The Level 3 Model. 8. BSIM. 9. HSPICE Level 28. 10. BSIM2. 11. BSIM3. 12. MOS Model 9. 13. The Active Device Capacitance. 14. Accounting for Systematic Process Variations. 15. Circuit Level Correlation of Models and Hardware. 16. New Model Candidates. 17. The Future of Device Models for Circuit Simulation. APPENDICES. A. An Executive Summary of the Various Models. B. Channel Length and Width. C. The Final Model Equations. D. The Extracted HSPICE Level 28 Model. E. The Binned BSIM2 Model. INDEX.

Abstract: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation. Including the major physical effects in state-of-the art MOS devices, the model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a single I-V expression, and guarantees the continuities of I/sub ds/, conductances and their derivatives throughout all V/sub gs/, V/sub ds/, and T/sub bs/, bias conditions. Compared with the previous BSIM models, the improved model continuity enhances the convergence property of the circuit simulators. Furthermore, the model accuracy has also been enhanced by including the dependencies of geometry and bias of parasitic series resistances, narrow width, bulk charge, and DIBL effects. The new model has the extensive built-in dependencies of important dimensional and processing parameters (e.g., channel length, width, gate oxide thickness, junction depth, substrate doping concentration, etc.). It allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling. The model has been implemented in the circuit simulators such as Spectre, Hspice, SmartSpice, Spice3e2, and so on.

Abstract: This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFETThe physics and operation of FinFETDetails of the FinFET standard model (BSIM-CMG)Parameter extraction in BSIM-CMGFinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG