TL;DR: In this paper, the elements of quantum mechanics are defined: electrons, photons and atoms, and the interaction of one-electron atoms with electromagnetic radiation is discussed, and some applications of atomic physics are discussed.
Abstract: 1. Electrons, photons and atoms. 2. The elements of quantum mechanics. 3. One-electron atoms. 4. Interaction of one-electron atoms with electromagnetic radiation. 5. One-electron atoms: fine structures and interactions with external electric and magnetic fields. 6. Two-electron atoms. 7. Many-electron atoms. 8. The interaction of many-electron atoms with electromagnetic fields. 9. Molecular structure. 10. Molecular spectra. 11. Atomic collisions: basic concepts and potential scattering. 12. Electron-atom collisions. 13. Atom-atom collisions. 14. Some applications of atomic physics.
TL;DR: In this article, minimal basis set atomic functions for ground state atoms from Rb(Z=37) to Rn(Z =86) are presented, in order to obtain systematic data for the screening constants and atomic radii following the work initiated by Slater.
Abstract: Minimal basis‐set atomic functions for the ground‐state atoms from Rb(Z=37) to Rn(Z=86) are presented. These functions are analyzed in order to obtain systematic data for the screening constants and atomic radii following the work initiated by Slater.
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.
Abstract: The large difference in interatomic spacing between GaN and InN is found to give rise to a solid phase miscibility gap. The temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence‐force‐field model where the lattice is allowed to relax beyond the first nearest neighbor. The strain energy is found to decrease until approximately the sixth nearest neighbor, but this approximation is suitable only in the dilute limit. Assuming a symmetric, regular‐solutionlike composition dependence of the enthalpy of mixing yields an interaction parameter of 5.98 kcal/mole. At a typical growth temperature of 800 °C, the solubility of In in GaN is calculated to be less than 6%. The miscibility gap is expected to represent a significant problem for the epitaxial growth of these alloys.