Topic
Antiparallel (electronics)
About: Antiparallel (electronics) is a research topic. Over the lifetime, 498 publications have been published within this topic receiving 5488 citations. The topic is also known as: inverse-parallel.
Papers published on a yearly basis
1 / 2
Papers
TL;DR: The magneto-Seebeck effect as mentioned in this paper is observed when a magnetic configuration changes the charge-based Seebeck coefficient, which can be measured as a voltage change directly without conversion of a spin current.
Abstract: Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 μV K⁻¹ from the antiparallel to the parallel direction close to the predicted value of -12.1 μV K⁻¹. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current.
327 citations
TL;DR: Spin-wave excitations (magnons) are investigated in a one-dimensional (1D) magnonic crystal fabricated out of Ni80Fe20 nanowires and find two different magnon band structures depending on the magnetic ordering of neighboring wires, i.e., parallel and antiparallel alignment.
Abstract: Spin-wave excitations (magnons) are investigated in a one-dimensional (1D) magnonic crystal fabricated out of Ni80Fe20 nanowires. We find two different magnon band structures depending on the magnetic ordering of neighboring wires, i.e., parallel and antiparallel alignment. At a zero in-plane magnetic field H the modes of the antiparallel case are close to those obtained by zone folding of the spin-wave dispersions of the parallel case. This is no longer true for nonzero H which opens a forbidden frequency gap at the Brillouin zone boundary. The 1D stop band gap scales with the external field, which generates a periodic potential for Bragg reflection of the magnons.
212 citations
Patent•
18 Aug 1998
TL;DR: In this article, an improved synthetic spin valve sensor having a high resistivity antiparallel coupling layer, typically formed of rhenium, between the pinning layers is presented.
Abstract: The present invention provides an improved synthetic spin valve sensor having a high resistivity antiparallel coupling layer, typically formed of rhenium, between pinned layers. The spin valve sensor of the present invention may be formed having a layered structure as follows: pinning layer/first pinned layer/high resistivity antiparallel coupling layer/second pinned layer/metallic nonferromagnetic spacer layer/free layer. Capping and seed layers typically are also included. The high resistivity of the antiparallel coupling layer of the present invention reduces shunt current through that layer to improve the GMR effect of the spin valve while maintaining sufficient antiparallel coupling between the pinned layers. The antiparallel coupling layer of the present invention also provides improved thermal stability.
181 citations
TL;DR: A new design approach that uses antiparallel resonant loops for CET systems is presented, which achieves frequency variation that is one-sixth that of conventional unidirectional loops, thus improving the power efficiency to a maximum of 87%.
Abstract: Due to the convenience of using electronic devices, contactless energy transfer (CET) systems have garnered interest in various fields of industry. In this paper, a new design approach that uses antiparallel resonant loops for CET systems is presented. Forward and reverse loops forming an antiparallel resonant structure stabilize the transfer efficiency and therefore prevent it from dramatic distance-related changes, a phenomenon that can occur in CET systems with nonradiative methods (or resonant methods). This paper proposes frequency-insensitive antiparallel resonant loops and the optimal design of these loops for uniform transfer efficiency according to the distance. The proposed technique achieves frequency variation that is one-sixth that of conventional unidirectional loops, thus improving the power efficiency to a maximum of 87%. The improved performance of data transmissions for near-field communication is also verified.
157 citations
TL;DR: In this paper, a single-level quantum dot coupled to two ferromagnetic metals and one ferromagnetisomer held at different temperatures was investigated for heat-to-charge current converter.
Abstract: We investigate a heat to charge current converter consisting of a single-level quantum dot coupled to two ferromagnetic metals and one ferromagnetic insulator held at different temperatures. We demonstrate that this nanoengine can act as an optimal heat to spin-polarized charge current converter in an antiparallel geometry, while it acts as a heat to pure spin current converter in the parallel case. We discuss the maximal output power of the device and its efficiency.
151 citations
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 11 |
| 2020 | 11 |
| 2019 | 12 |
| 2018 | 14 |
| 2017 | 10 |
| 2016 | 9 |