About: Acheson process is a research topic. Over the lifetime, 28 publications have been published within this topic receiving 675 citations. The topic is also known as: Acheson Furnace.
TL;DR: In this paper, the authors present an overview of safety issues in non-oxide materials and their application in the development of complex composites and solid solutions, including a discussion of the safety issues of carbide and nitride powders.
Abstract: Part 1 Introduction: overview safety issues. Non-oxide materials - properties and applications engineering: introduction advanced ceramics - origin, current status, trends: origins of advanced ceramics recent status monolithic ceramics ceramics composites manufacturing applications engineering: the market wear components ceramic armour high temperature applications electrically conductive ceramics corrosion resistant applications automotive applications electronic substrates special applications. Critical powder characteristics: introduction Tungsten carbide: effects of Tungsten/carbon stoichiometry hard metal composition silicon carbide: effect of oxygen sintering developments effect of impurities effect of particle size and method of synthesis silicon nitride: sintering developments effect of particle size effect of impurities effect of synthesis method aluminum nitride: sintering developments effect of oxygen effect of impurities effect of synthesis method summary references. Part 2 Carbothermal reduction synthesis processes: overall process safety issues. Thermochemistry and kinetics: introduction thermochemistry kinetics importance of the gas phase synthesis of carbide and nitride powders references. Acheson process: introduction, history basic silicon carbide process description manufacturing cost factors summary references. Electric arc process: introduction boron carbide manufacturing other non-oxide ceramics references. Tube/pusher/moving bed furnace processes: introduction fundamental physio-chemical considerations system design considerations process scale-up considerations safety considerations conclusions acknowledges nomenclature references. Rotary tube reactor processes: introduction rotary furnace design configurations process considerations operating difficulties applications to non-oxide powder synthesis references. Fluidized bed reactor processes: background application to carbothermal reduction processes references. Part 3 Combustion synthesis processes: overall process safety issues. Thermochemistry and kinetics: principles of combustion synthesis thermodynamics and thermochemistry combustion front structure and stability analysis gasless combustion gas solid combustion synthesis of complex composites and solid solutions nomenclature references. Processes: introduction solid-solid reactions gas-solid reactions summary nomenclature references. Part 4 Gas phase synthesis processes: overall process safety issues references. (Part contents).
TL;DR: In this paper, a brief summary is given for the different SiC crystal structures and the most common encountered polytypes, and the resulting mechanical, structural and electrical properties of the fabricated SiC will be discussed as a function of the synthesis methods.
Abstract: Silicon carbide is an important non-oxide ceramic which has diverse industrial applications. In fact, it has exclusive properties such as high hardness and strength, chemical and thermal stability, high melting point, oxidation resistance, high erosion resistance, etc. All of these qualities make SiC a perfect candidate for high power, high temperature electronic devices as well as abrasion and cutting applications. Quite a lot of works were reported on SiC synthesis since the manufacturing process initiated by Acheson in 1892. In this chapter, a brief summary is given for the different SiC crystal structures and the most common encountered polytypes will be cited. We focus then on the various fabrication routes of SiC starting from the traditional Acheson process which led to a large extent into commercialization of silicon carbide. This process is based on a conventional carbothermal reduction method for the synthesis of SiC powders. Nevertheless, this process involves numerous steps, has an excessive demand for energy and provides rather poor quality materials. Several alternative methods have been previously reported for the SiC production. An overview of the most common used methods for SiC elaboration such as physical vapour deposition (PVT), chemical vapour deposition (CVD), sol-gel, liquid phase sintering (LPS) or mechanical alloying (MA) will be detailed. The resulting mechanical, structural and electrical properties of the fabricated SiC will be discussed as a function of the synthesis methods.
TL;DR: A mechanochemical approach is demonstrated to afford highly crystalline graphite nanosheets at ambient temperature using a carbon nitride framework driven by a denitriding reaction in the presence of magnesium, which is promoted by mechanochemistry.
Abstract: Graphite has become a critical material because of its high supply risk and essential applications in energy industries. Its present synthesis still relies on an energy-intensive thermal treatment pathway (Acheson process) at about 3000 °C. Herein, a mechanochemical approach is demonstrated to afford highly crystalline graphite nanosheets at ambient temperature. The key to the success of our methodology lies in the successive decomposition and rearrangement of a carbon nitride framework driven by a denitriding reaction in the presence of magnesium. The afforded graphite features high crystallinity, a high degree of graphitization, a thin nanosheet architecture, and a small flake size, which endow it with superior efficiency in lithium-ion batteries as an anode material in terms of rate capacity and cycle stability. The mild and cost-effective pathway used in this study could be a promising alternative for graphite production.
TL;DR: In this paper, a sublimation growth process working at lower temperatures than the modified Lely growth process is described, and the quality of the material in relation to growth mechanism and surface appearance as a consequence of step flow growth and step bunching is described.
Abstract: Sublimation growth is the key growth process for silicon carbide. The advancements have come through from evolution from the first Acheson process to produce coarse crystalline silicon carbide, continued by the introduction of the Lely processes in which single-crystal silicon carbide was possible, to finally reach a modified Lely process with a seeding technique introduced by Tairov and Tsvetkov (1978), which made large-area single-crystal wafers available. This evolution created the platform for single-crystal growth of semiconductor grade silicon carbide for electronics. Even so, the growth is not completely understood. The polytype stability and their structural quality in bulk and epitaxial growth still needs better understanding of the growth processes. Here, we describe a sublimation growth process working at lower temperatures than the modified Lely growth process. The quality of the material in relation to growth mechanism and surface appearance as a consequence of step flow growth and step bunching is described. The stability of hexagonal polytypes, and, in particular, the appearance of the cubic silicon carbide polytype is described.
TL;DR: In this article, the specific behavior of two different silicon carbide powders - one of them blended with additives -were reported along with interpretational approaches. And the SiC layers with a thickness of 1μm were processed with coherent radiation of 1064 nm.
Abstract: Silicon carbide – a solid with covalent bonds - is conventionally synthesized via the Acheson process. Usually solid bodies of silicon carbide with definite shapes are generated from the grained material via hot isostatic pressing or liquid phase sintering. Both processes are conducted under well-controlled temperature regimes. Applying the freeform fabrication technique “Laser Micro Sintering” poses a big challenge to experimental skill due to the nonequilibrium conditions that are characteristic features of laser material processing. Successive layers SiC layers with a thickness of 1μm were processed with coherent radiation of 1064 nm. The specific behavior of two different silicon carbide powders - one of them blended with additives - are reported along with interpretational approaches.