Topic
2N2222
About: 2N2222 is a research topic. Over the lifetime, 4 publications have been published within this topic receiving 9 citations.
Papers
TL;DR: In this article, the Gummel-Poon static large-signal model parameters were determined before and after irradiation and the results were used to accurately model irradiated transistors operating at all current levels in the forward active region.
8 citations
TL;DR: A new current conveyor (CCII+) full-wave rectifier for low frequency/small signal medical applications, which needs only two CCII+s, two resistors, and three simple current mirrors, which is easy for IC implementation and for building in many countries.
Abstract: This paper presents a new current conveyor (CCII+) full-wave rectifier for low frequency/small signal medical applications. The proposed rectifier is based on the current conveyor full-wave rectifier proposed previously, but the proposed rectifier is better in view of no need diodes to rectify, and no need bias sources to overcome the zero crossing error. It needs only two CCII+s, two resistors, and three simple current mirrors, which is easy for IC implementation and for building in many countries. The PSPICE simulation with the current conveyor CCII+ in the current feedback opamp AD844 IC and the 2N2222 bipolar current mirror shows the good low frequency/small signal rectification, the operation voltage of down to 6 .
5 citations
20 Dec 2013
TL;DR: In this paper, the authors examined neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analyzed the transistors in terms of electrical characterization such as current gain after neutron radiation.
Abstract: This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region.
3 citations
Patent•
9 Mar 2016
TL;DR: In this article, a high temperature 200 DEG C resistant silicon carbide MOSFET drive circuit is designed to magnify a 0-5V square wave signal generated by a CHT-555 timer into a high level of 18V, wherein a rise time and a fall time of the magnified drive signal are both less than 80ns.
Abstract: Provided is a high-temperature silicon carbide MOSFET drive circuit, and belongs to the field of high-temperature power and electronics. The invention solves the problem that a largest voltage supply of a high-temperature resistant chip as a signal generating source is less than 18V, a high level of a PWM signal output by the chip is less than 18V, which cannot meet a requirement of 18V for the high level of a drive signal. The invention takes a high temperature 200 DEG C resistant NPN transistor 2N2222, a PNP transistor 2N2907, a regulator chip TPS76901, a 1N53XX series voltage regulator tube, a timer chip CHT-555 as foundation, the high temperature 200 DEG C resistant silicon carbide MOSFET drive circuit is designed. The drive circuit can magnify a 0-5V square wave signal generated by a CHT-555 timer into a silicon carbide MOSFET drive signal with a low level of -5V and a high level of 18V, wherein a rise time and a fall time of the magnified drive signal are both less than 80ns.
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2018 | 1 |
| 2016 | 1 |
| 2013 | 1 |
| 1991 | 1 |