Journal Article10.1016/J.ORGEL.2008.06.006
Work function engineering of electrodes via electropolymerization of ethylenedioxythiophenes and its derivatives
Yumeng Shi,Shyh-Chyang Luo,Wenjing Fang,Keke Zhang,Emril Mohamed Ali,Freddy Yin Chiang Boey,Jackie Y. Ying,Junling Wang,Hsiao-hua Yu,Lain-Jong Li +9 more
TL;DR: The work functions of two commonly used electrodes, Au and indium-tinoxide (ITO), can be modified by surface-electropolymerization of EDOT or its derivatives as mentioned in this paper.
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About: This article is published in Organic Electronics. The article was published on 01 Oct 2008. The article focuses on the topics: Work function & Organic electronics.
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Citations
Work function engineering of graphene electrode via chemical doping.
TL;DR: Graphene films synthesized by chemical vapor deposition (CVD) method can be used as thin transparent electrodes with tunable work function and the maximum power conversion efficiency (PCE) achieved was approximately 0.08%, which is more than 40 times larger than the devices without chemical doping.
565
Toward indium-free optoelectronic devices: Dielectric/metal/dielectric alternative transparent conductive electrode in organic photovoltaic cells
TL;DR: In this article, the authors present the state-of-the-art concerning the dielectric/metal/dielectric structures and their application as transparent electrodes in organic photovoltaic cells (OPVCs).
97
Electric-field-assisted growth of functionalized poly(3,4-ethylenedioxythiophene) nanowires for label-free protein detection.
TL;DR: These functionalized PEDOT nanowire devices show typical depletion-mode p-type field-effect transistor (FET) properties and the binding of a positively charged protein causes a substantial decrease in current flow, attributed to the specific interaction between target protein molecules and aptamer-conjugated polymer chains.
71
Effects of the buffer layer inserted between the transparent conductive oxide anode and the organic electron donor
A. Godoy,Linda Cattin,L. Toumi,F. R. Diaz,M. A. del Valle,G.M. Soto,B. Kouskoussa,Mustapha Morsli,K. Benchouk,A. Khelil,J.C. Bernède +10 more
TL;DR: In this article, the Schottky-Mott model is used to predict hole exchange at anode/organic electron donor interfaces, and a good correlation between the "metal/buffer layer" work function and the barrier for hole exchange is obtained, as expected by the model.
59
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