Thickness effect on the ferroelectric properties of La-doped HfO2 epitaxial films down to 4.5 nm
TL;DR: In this article, the orthorhombic phase stabilization of HfO2 with La allows very high polarization and endurance to be achieved, but these properties have not been confirmed yet in films having a thickness of less than 10 nm.
read more
Abstract: Stabilization of the orthorhombic phase of HfO2 with La allows very high polarization and endurance to be achieved. However, these properties have not been confirmed yet in films having a thickness of less than 10 nm. We have grown (111)-oriented La (2 at%) doped epitaxial HfO2 films on SrTiO3(001) and Si(001) substrates, and report on the thickness dependence of their ferroelectric properties. Films of less than 7 nm thickness show a high remanent polarization of about 30 μC cm−2, slight wake-up, an endurance of at least 1010 cycles and a retention of more than 10 years, with the endurance and retention measured at the same poling voltage. La-doped HfO2 films even as thin as 4.5 nm also show robust ferroelectric properties.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films.
Tingfeng Song,Huan Tan,Romain Bachelet,Guillaume Saint-Girons,Ignasi Fina,Florencio Sánchez +5 more
- 19 Oct 2021
TL;DR: In this article, the impact of the La concentration on the stabilization of the ferroelectric phase has been determined in HfO2 thin films with 2-5 at. % La doping.
34
Microstructural evolution and ferroelectricity in HfO2 films
TL;DR: In this paper , the microstructure-property relationships in polycrystalline and epitaxial HfO2 films are compared based on their different micro-structural characteristics.
26
A perspective on the physical scaling down of hafnia-based ferroelectrics
TL;DR: In this paper , the size effect of HfO2-based ferroelectric thin films is thoroughly discussed in the present review, and the impact of thickness on the electrical properties and the electrical performance of these devices is extensively discussed from the perspective of fundamental theory and experimental results.
19
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Yangyang Si,Tianfu Zhang,Chenhan Liu,Sujit Das,Bin Xu,Roman G. Burkovsky,Xian-Kui Wei,Zuhuang Chen +7 more
TL;DR: This review explores antiferroelectric oxide thin-films, their properties, and applications in energy storage, solid-state cooling, and devices, highlighting the importance of understanding their behavior and phase transitions for unlocking their full potential in functional devices.
18
Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films
Tingfeng Song,Huan Tan,Anne Robert,Saúl Estandía,Jaume Gazquez,Florencio Sánchez,Ignasi Fina +6 more
TL;DR: In this paper , the authors investigate stress effects in La-doped epitaxial HfO2 films and show that Hf0.5O2 shows always larger remanent polarization (Pr) if the same substrate is used.
References
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
2.3K
Physics of thin-film ferroelectric oxides
TL;DR: In this article, the authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices.
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
1.5K
Review and perspective on ferroelectric HfO2-based thin films for memory applications
TL;DR: In this article, the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material's point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.
480
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films.
Yingfen Wei,Pavan Nukala,Pavan Nukala,Mart Salverda,Sylvia Matzen,Hong Jian Zhao,Jamo Momand,Arnoud Everhardt,Guillaume Agnus,Graeme R. Blake,Philippe Lecoeur,Bart J. Kooi,Jorge Íñiguez,Brahim Dkhil,Beatriz Noheda +14 more
TL;DR: Ferroelectric hafnia occurs only in a thin-film orthorhombic phase that needs wake-up cycling to induce ferroelectricity, so results point towards thin films of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.
462