Proceedings Article10.1109/MWSYM.1997.604512
The operation of microwave power amplifiers fabricated from wide bandgap semiconductors
Robert J. Trew
- 08 Jun 1997
- Vol. 1, pp 45-48
6
TL;DR: In this paper, the performance of microwave power amplifiers fabricated using SiC and GaN-based MESFET's is investigated and demonstrated that these amplifiers can produce RF output power on the order of 4-6 W/mm of gate periphery with near ideal power-added efficiency.
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Abstract: There are a variety of RF and microwave electronic devices that can be fabricated from wide bandgap semiconductors such as SiC and GaN. These semiconductors have many properties that make them near ideal for electronic devices intended for high temperature, high frequency, high power, and radiation hard applications. Prototype SiC and GaN-based electronic devices with very good DC and RF performance have been demonstrated and devices such as diodes are commercially available, while RF and high frequency transistors are rapidly approaching the commercialization stage. In this work the performance of microwave power amplifiers fabricated using SiC and GaN-based MESFET's are discussed and investigated. It is demonstrated that these amplifiers can produce RF output power on the order of 4-6 W/mm of gate periphery with near ideal power-added efficiency.
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Citations
Development of High-Frequency SiC-MESFETs
TL;DR: In this article, the high frequency characteristics of the tested SiC high-frequency MESFET are presented and trends in research on improvement of the highfrequency characteristics are described.
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The potential performance of wide bandgap microwave power MESFETs
TL;DR: In this paper, the theoretical potential of wide bandgap (WBG) semiconductors silicon carbide and gallium nitride for microwave power MESFET devices was investigated.
3
A new flip-chip mounting technique for high temperature operation
Ananjan Basu,Tatsuo Itoh +1 more
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TL;DR: In this article, a new method is described for mounting microwave semiconductor devices on a circuit board in a flip-chip configuration, which overcomes the limitations on the maximum temperature of operation encountered in conventional bonding techniques such as soldering.
GaN-Based 100 Watt Microwave Power Hot Electron MODFET
David E. Grider
- 30 Sep 1999
TL;DR: In this article, the HRL/UCSB team has demonstrated GaN MODFET devices with microwave power densities at X-band and K-band frequencies that are several times larger than conventional solid state microwave power devices such as GaAs based PHEMTs.
References
4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
TL;DR: MESFET's were fabricated using 4H-SiC substrates and epitaxy The DC, S-parameter, and output power characteristics of the 07 /spl mu/m gate length, 332 /spl µ/m m gate width, and 1.5 GHz gain at 5 GHz and f/sub max/=129 GHz at V/sub ds/=54 V were measured as discussed by the authors.
82
4H-SiC MESFET with 65.7% power added efficiency at 850 MHz
K. Moore,Charles E. Weitzel,K.J. Nordquist,L.L. Pond,John W. Palmour,Scott Allen,C.H. Carter +6 more
TL;DR: In this paper, a SiC MESFET was fabricated and characterized for large-signal performance over a wide range of gate and drain biases and the power added efficiency was 65.7%.
52
High frequency performance of SiC heterojunction bipolar transistors
TL;DR: In this paper, a compact heterojunction bipolar transistor (HBT) model was employed to simulate the high frequency and high power performances of SiC-based bipolar transistors.
36
High-temperature GaN/SiC heterojunction bipolar transistor with high gain
Jacques I. Pankove,S.S. Chang,H.C. Lee,R.J. Molnar,Theodore D. Moustakas,B. Van Zeghbroeck +5 more
- 11 Dec 1994
TL;DR: In this paper, a high temperature heterojunction bipolar transistor (HBT) with a current gain as high as 100,000 has been fabricated, which utilizes GaN for the emitter and SiC for the base and collector.
29
High power 4H-SiC static induction transistors
R.R. Siergiej,Rowland C. Clarke,A.K. Aganval,C.D. Brandt,A.A. Burk,A.W. Morse,P.A. Orphanos +6 more
- 10 Dec 1995
TL;DR: In this article, static induction transistors have been demonstrated in 4H-SiC SITs with a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB.
29
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