Journal Article10.1039/C7NR02215H
The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system
Jung Ho Yoon,Dae Eun Kwon,Yumin Kim,Young Jae Kwon,Kyung Jean Yoon,Tae Hyung Park,Xing Long Shao,Cheol Seong Hwang +7 more
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TL;DR: In this work, the Pt/TiO2/HfO2-x/TiN resistive switching memory structure showed self-rectifying resistive switch behavior with unprecedented unique I-V curves, which can give an extremely uniform variation of the low resistance state.
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Abstract: To replace the present NAND flash memory, resistance switching random access memory (ReRAM), which has both memory and selection functionalities with a simple metal–insulator–metal structure should be implemented. To accomplish this goal, ReRAM must be self-rectifying, low-power-consuming, and highly uniform, and it must have reliable states. In this work, the Pt/TiO2/HfO2−x/TiN resistive switching memory structure showed self-rectifying resistive switching behavior with unprecedented unique I–V curves. This is named “self-current saturation,” which can give an extremely uniform variation of the low resistance state. The plausible reasons for the whole switching behavior, including the unique I–V curves, in this material system are presented herein. The diffusion of Ti along the grain boundaries of HfO2 down to the bottom electrode TiN and the defect formation within the HfO2 layer near the TiO2/HfO2 interface made the resistance switching device have the characteristics of both the unidirectional diode and electronic bipolar switching devices.
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Citations
Multibit memory operation of metal-oxide bi-layer memristors
Spyros Stathopoulos,Ali Khiat,Maria Trapatseli,Simone Cortese,Alexantrou Serb,Ilia Valov,Themis Prodromakis +6 more
TL;DR: A programming methodology is proposed that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states that were found to correlate with the transport properties of the introduced barrier layers.
Research progress on solutions to the sneak path issue in memristor crossbar arrays
Lingyun Shi,Guohao Zheng,Bobo Tian,Bobo Tian,Brahim Dkhil,Chun-Gang Duan,Chun-Gang Duan +6 more
- 19 May 2020
TL;DR: The concept of the sneak-path current issue and solutions proposed to solve it are presented, and some typical and promising devices are selected, and their structures and properties are presented in detail.
Hardware Implementation of Neuromorphic Computing Using Large-Scale Memristor Crossbar Arrays
Yesheng Li,Kah-Wee Ang +1 more
- 01 Jan 2021
TL;DR: This Report serves as a guide for the hardware implementation of NCS based on large‐scale CBAs and recommends for further performance optimization at the device, circuit, and algorithm levels are proposed.
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Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory
Abstract: Flexible memory is highly desirable for data storage in portable wearable electronics. Here, a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is fabricated a on polyethylene naphthalate (PEN) substrate, and exhibits outstanding uniformity, high durability, and excellent mechanical flexibility. The coefficients of variations for high and low resistance state are ≈3.2% and ≈3%, respectively. No performance degradation is observed under mechanical stress with bending radius ranging from 70 to 10 mm. Interestingly, the performance degradation after long‐term stability tests can be recovered. An asymmetric hourglass‐shaped oxygen vacancy (Vo) distribution at the HfO2/TiO2 interface plays a key role in high performance of this flexible RRAM device. The proposed flexible RRAM devices have potential applications in wearable electronics.
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Analog Switching and Artificial Synaptic Behavior of Ag/SiO x :Ag/TiO x /p ++ -Si Memristor Device
TL;DR: Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.
References
Complementary resistive switches for passive nanocrossbar memories
TL;DR: A complementary resistive switch is introduced that consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption.
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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim,Razali Ismail +1 more
TL;DR: In this article, the authors conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.
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A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Jun Yeong Seok,Jun Yeong Seok,Seul Ji Song,Jung Ho Yoon,Kyung Jean Yoon,Tae Hyung Park,Dae Eun Kwon,Hyungkwang Lim,Hyungkwang Lim,Gun Hwan Kim,Doo Seok Jeong,Cheol Seong Hwang +11 more
TL;DR: In this article, two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. But these have critical correlations, however, and depend on the involved types of resistance switching memory.
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XPS study of thin films of titanium oxysulfides
Danielle Gonbeau,Claude Guimon,Geneviève Pfister-Guillouzo,Alain Levasseur,G. Meunier,R. Dormoy +5 more
TL;DR: In this paper, thin films of titanium oxysulfides which could be used as positive electrode materials in microbatteries were analysed by XPS and the results showed the existence of a new type of titanium.
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Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Stephan Menzel,Matthias Waters,Astrid Marchewka,Ulrich Böttger,Regina Dittmann,Rainer Waser,Rainer Waser +6 more
TL;DR: In this article, the authors used an electrothermal 2D finite element model to analyze the switching kinetics of SrTiO3 memristive cells and found that the nonlinearity arises from a temperature increase in a few-nanometer-thick disc-shaped region at the Ti electrode and a corresponding exponential increase in oxygen-vacancy mobility.
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