Journal Article10.1021/ACSAELM.8B00132
Surface-Functionalized Interfacial Self-AssembledMonolayers as Copper Electrode Diffusion Barriers for Oxide SemiconductorThin-Film Transistor
Sung-Eun Lee,Sung-Eun Lee,Jintaek Park,Jintaek Park,Jun Hee Lee,Eun Goo Lee,Eun Goo Lee,Changik Im,Hyun-Jae Na,Hyun-Jae Na,Nam-Kwang Cho,Keon-Hee Lim,Keon-Hee Lim,Youn Sang Kim +13 more
- 13 Feb 2019
- Vol. 1, Iss: 3, pp 430-436
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TL;DR: In this paper, the stability and control of copper (Cu) electrode application in oxide semiconductor indium gallium zinc oxide (IGZO) can improve the resistance-capacitance (RC) delay.
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Abstract: The stability and control of copper (Cu) electrode application in oxide semiconductor indium gallium zinc oxide (IGZO) can improve the resistance–capacitance (RC) delay, which is greatly critical f...
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Citations
Self-Assembled Monolayers for Batteries
TL;DR: In this paper, a review of the state-of-the-art in self-assembled monolayers (SAMs) in battery chemistry is presented, focusing on the improvement of chemical stability and the regulation of nucleation in conversion electrode reactions.
66
Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
Seongjae Kim,Hocheon Yoo +1 more
TL;DR: In this paper, the authors revisited self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, to introduce their various functions in electronic devices.
26
Organic materials as a passivation layer for metal oxide semiconductors
TL;DR: In this paper, the authors provide an overview on the enhanced stability of metal oxide thin-film transistors via the employment of organic materials as passivation layers, including the most recent accomplishments in organic passivation for metal oxide semiconductors.
24
Performance Improvement of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by Boron Implantation
Seung-Hee Kang,I. Sak Lee,Kyung-Hwan Kwak,Kyeong Take Min,Nack Bong Choi,Han-Wook Hwang,Hyun Chul Choi,Hyun Jae Kim +7 more
TL;DR: In this paper , a self-aligned coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) was investigated by implanting boron (B) into the source/drain (SD) n+ region.
18
Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments.
TL;DR: 3-aminopropyltrimethoxysilane (APTMS) is selected as a model molecule of aminosilane for the silanization of nanoporous carbon-doped organosilicate (p-SiOCH) under tightly controlled process environments and a bonding-structure evolution model, as distinct from those offered previously, is proposed and discussed.
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References
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TL;DR: In this article, a new effect influencing the operation of organic field-effect transistors resulting from the choice of gate insulator material is presented, and significant benefits are achievable by the use of low-k dielectrics as opposed to the existing trend of increasing the permittivity for low operational voltage.
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TL;DR: In this article, the electromigration performance of Cu metalization has been reviewed with an explanation as to why the advantage of Cu over Al alloys in the fine line regime is not as great as anticipated.
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TL;DR: In this article, a self-assembled monolayer is proposed to provide a diffusion barrier in an integrated circuit, which consists of an aromatic group at the terminus of the self-assembly.
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Ternary amorphous metallic thin films as diffusion barriers for Cu metallization
TL;DR: The field of ternary amorphous metallic thin films made of an early transition metal and a combination of B, C, N, Si, and P is briefly reviewed in this paper.
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