Patent
Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
Hiromi Kiyose
- 03 Sep 2008
13
TL;DR: An additive containing a hexafluorosilicic acid solution (H 2 SiF 6 + H 2 O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism as mentioned in this paper.
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Abstract: An additive containing a hexafluorosilicic acid solution (H 2 SiF 6 +H 2 O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF 4 +H 2 O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F − which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.
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Citations
Patent
Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same
Jun-Ing Kil,Cheol-Won Bang,Hak-Muk Kim,Young-Su Jang,Gem-Bi Shim +4 more
- 20 Apr 2015
TL;DR: An etchant composition for nitride layers includes phosphoric acid in an amount ranging from about 80 weight percent to about 90 weight percent, a silicon-fluorine compound, and a remainder of water, based on the total weight of the etchant.
22
Patent
Substrate processing apparatus and substrate processing method using substrate processing apparatus
Hinode Taiki,Takashi Ota,Kazuhide Saito,Kunio Yamada +3 more
- 02 Apr 2019
TL;DR: In this article, a lamp-heaters in a casing made of a silica glass are used to heat a solution film on the substrate, and a nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.
10
Patent
Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program
Hideaki Sato,Takashi Nagai,Hiromi Hara +2 more
- 12 May 2016
TL;DR: In this article, a substrate liquid processing apparatus that includes a liquid processing unit that performs liquid processing on a film formed on a surface of a substrate with an etching liquid, and a controller that controls the etaching liquid supply unit is described.
10
Patent
Substrate processing apparatus
Namba Toshimitsu
- 31 Mar 2016
TL;DR: In this paper, the processing liquid used in the processing unit is collected and selectively supplied to first and second replenishment tanks, and the used processing liquid is supplied to the second tank while being heated by a heater.
5
Patent
Substrate treatment apparatus, substrate treatment method, and etchant
Katsuhiro Sato,Kaori Deura,Yoshinori Kitamura,Terada Takahiro,Yoshihiro Ogawa,Hashimoto Yuji,Masaaki Hirakawa,Murakami Yukako,Hideaki Hirabayashi +8 more
- 23 Aug 2016
TL;DR: In this article, a substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector for removing silicon nitride film from the substrate.
4
References
Patent
Semiconductor nitride film etching system
Ban Cozy
- 25 Sep 1996
TL;DR: In this paper, a hot phosphoric acid-based treatment solution is used for semiconductor nitride film etching, and the concentration of components of the treatment solution, particularly silicon concentration, is controlled, thus providing stabilization of the etching rate of a silicon-nitride film and stable control of the selection ratio.
48
Patent
Etching composition and etching method
Hara Yasushi,Shimono Tetsusuu,Takahashi Fumiharu,哲数 下野,史治 高橋 +4 more
- 25 Jul 2006
TL;DR: In this article, the etching selection ratio of silicon nitride to silicon oxide is not reduced even at a high temperature for an etching composition of silicon polysilicon nitride.
34
Patent
Silicon nitride-silicon oxide etchant
Anthony S. Squillace,Albert E Martin,Jerald J Rudmann +2 more
- 19 Jul 1971
TL;DR: In this article, a chemical to etchant and a process for chemically etching silicon nitride-silicon oxide composite structure which may be used, for example in microelectronic devices.
33
Patent
Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device
Hisashi Oguchi,Hiroyasu Iimori,Mami Saito,Yoshihiro Ogawa,Hiroshi Tomita,Soichi Nadahara +5 more
- 30 Jul 2007
TL;DR: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etch solution is at a specified level or lower; a circulation path circulating the etched solution; a concentration controller sampling the etching liquid from the circulation path and controlling concentrations of the etich solution respectively; and a refilling chemical liquid feeder feeding a refining chemical liquid including the first component having a concentration higher than the first components in the solution as mentioned in this paper.
32
Patent
Composition for etching, and etching method
Hara Yasushi,Takahashi Fumiharu,史治 高橋 +2 more
- 14 Jun 2007
TL;DR: In this paper, an etchant which does not produce a silver residue when etching silver or a silver alloy, and does not vary an etching rate even when the etchant is repeatedly used, is provided.
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