Patent
Structure and method for biasing phase change memory array for reliable writing
Roy E. Scheuerlein
- 11 Jan 2006
230
TL;DR: In this article, a memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state, thus leakage is low and assurance is high that no uninitialized memory cells are disturbed.
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Abstract: A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected memory cells are disturbed. In order to avoid disturbing unselected memory cells during sequential writing, previously selected word and bit lines are brought to their unselected voltages before new bit lines and word lines are selected. A modified current mirror structure controls state switching of the phase change material.
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Citations
Patent
Nonvolatile Semiconductor Memory Device
Noboru Shibata,Tomoharu Tanaka +1 more
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TL;DR: In this paper, a memory cell array has a first and a second storage area, the first storage area has a memory elements selected by an address signal, and the second storage is a control circuit with a fuse element.
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S. Brad Herner,Tanmay Kumar,Christopher J. Petti +2 more
- 05 May 2006
TL;DR: In this paper, a nonvolatile memory cell is constructed above a substrate, where a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy and BxNy.
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- 09 May 2005
TL;DR: In this article, a rewriteable nonvolatile memory cell is formed above a substrate, where a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NiO, Nb 2 O 5, TiO 2, HfO 2, Al 2 O 3, MgO x, CrO 2), VO, BN, and AlN.
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Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
April D. Schricker,S. Brad Herner,Mark H. Clark +2 more
- 29 Jun 2007
TL;DR: In this article, a method of forming a memory cell is provided that includes forming a first conductor above a substrate, forming a diode above the first conductor, and forming a reversible resistance switching element above the second conductor using a selective deposition process.
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Kwang-Soo Seol,Yoon-dong Park,Suk-pil Kim +2 more
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TL;DR: In this paper, a multi-layer non-volatile memory device and a method of manufacturing the same was proposed, which includes a plurality of first semiconductor layers having a stack structure.
191
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