Journal Article10.1002/PSSA.201600465
Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions
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TL;DR: In this paper, the influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs was investigated, which can be explained by the reduction of structural defects and oxygen vacancies.
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Abstract: Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O2 and N2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O2, the TFT device with saturation mobility of 27.55 cm2 V−1 s−1, threshold voltage of 0.5 V and drain current on-off ratio of 108 is obtained. After an applied VGS of 25 and −25 V for 2000 s in darkness, the values of ΔVth are 4.5 and −0.92 V, respectively.
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Citations
Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
TL;DR: In this article, the authors discuss the recent progress made in n-type semiconductor TFTs activated at low temperatures both on rigid and flexible substrates with a focus on the replacement of conventional high temperature annealing.
Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors
TL;DR: In this article, the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs) were examined.
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Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update
Wanrong Liu,Wanrong Liu,Yulong Huang,Chenxing Jin,Bosheng Zhou,Jinran Yu,Yuchen Liang,Qijun Sun,Jia Sun,Junliang Yang +9 more
TL;DR: A steep-slope In-Sn-O memtransistor with multi-gate design with weight update method is demonstrated to simulate the synaptic functions with readily programmable plasticity to provide a new strategy for developing neuromorphic computing.
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Thin Film Logic Circuits with Amorphous SiInZnO Channel Layer Annealed at Different Atmospheres for Next-Generation Integrated Circuits
Byeong Hyeon Lee,Sang Yeol Lee +1 more
Abstract: In this study, amorphous‐oxide‐based thin film logic circuits are fabricated using only an n‐type silicon‐indium‐zinc‐oxide (a‐SIZO) active channel layer annealed at different atmospheres (N2 or air). More carriers are present in the N2 atmosphere than in the air because the number of oxygen vacancies (VO) formed is higher. The inverters (NOT logic circuits) are simply fabricated by adopting different Vth, adjusted by using different annealing atmospheres. The inverters have high voltage gain values of 11.64 and 9.99 at VDD = 5 V. A higher gain is obtained when the thin film transistor annealed in N2 is used in the enhancement mode. The reason for this is closely related to the subthreshold slope value. Furthermore, more complex n‐type‐based NAND and NOR thin‐film circuits are fabricated by simply adopting different annealing atmospheres, and are confirmed to operate like the logic gates. This simple fabrication method of thin‐film logic circuits can open up the possibility for the implementation of next‐generation integrated circuits.
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References
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
8.2K
Transparent conducting oxide semiconductors for transparent electrodes
TL;DR: The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper.
2.1K
Oxygen vacancies in ZnO
TL;DR: Vlasenko and Watkins as mentioned in this paper showed that the oxygen vacancy VO is not a shallow donor, but has a deep e(2+∕0) level at ∼10eV below the conduction band.
2K
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
1.8K