Journal Article10.1557/PROC-742-K2.9
Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers
Yu. M. Suleimanov,S. Lulu,I. Tarasov,Sergei S. Ostapenko,Stephen E. Saddow,T. V. Torchinska,V.D. Heydemann,M. D. Roth,Olle Kordina,Mike F. MacMillan +9 more
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TL;DR: In this paper, a non-contact and non-destructive spatially resolved characterization of traps and luminescence centers in vanadium-free semi-insulating 6H-SiC wafers is reported.
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Abstract: We report on non-contact and non-destructive spatially resolved characterization of traps and luminescence centers in vanadium-free semi-insulating 6H-SiC. Two optical techniques were employed: photoluminescence (PL) mapping and thermally stimulated luminescence (TSL) imaging on SiC wafers. PL and TSL topography reveal inhomogeneity at the periphery regions of the wafers. Low-temperature PL spectra show broad bands with the maxima at 1.75eV and 1.2eV, including a sharp zero-phonon line at 1.344eV. The TSL glow curves at T>80K show different peaks in the visible and infrared bands. The luminescence spectrum of the 105K TSL peak replicates 1.75eV band, while the 120K peak corresponds to the 1.2eV band. Additionally, the high temperature TSL peak at 210K shows an excellent match with 1.344eV zero phonon line. The trap energies of different peaks are calculated. We discuss a model of complex defects composed of closely spaced electron (hole) trap and UD3 defect.
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Citations
Compensating defect centres in semi-insulating 6H-SiC
TL;DR: In this article, photoinduced transient spectroscopy (PITS) has been applied to study electronic properties of point defects associated with charge compensation in semi-insulating (SI) 6H-SiC substrates.
References
Site effect on the impurity levels in 4 H , 6 H , and 1 5 R SiC
TL;DR: In this paper, the existence of site-dependent impurity levels caused by inequivalent sites in $4H, $6H, and $15R$ SiC has been verified from a study of configuration coordinate phonons.
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Semi‐insulating 6H–SiC grown by physical vapor transport
H. McD. Hobgood,R.C. Glass,G. Augustine,R. H. Hopkins,Jason Ronald Jenny,Marek Skowronski,William C. Mitchel,M. D. Roth +7 more
TL;DR: The semi-insulating properties of vanadium-doped 6H-SiC crystals are attributed to compensation of residual acceptors by the deep-level vanadium V4+(3d1) donor located near the middle of the band gap as mentioned in this paper.
165
Material characterization need for SiC-based devices
TL;DR: In this paper, the characterization techniques can roughly be divided into two different categories, routine characterization that are made on most grown material and specialized characterization that were performed in order to study and understand specific material properties.
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Thermoluminescence and Related Electronic Processes of 4H/6H-SiC
Th. Stiasny,R. Helbig +1 more
TL;DR: In this paper, a two-center model consisting of one trap and one recombination center was used to explain thermoluminescence and thermally stimulated conductivity (TSC) in 6H/4H-SiC boule crystals.
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