Patent
Solid state imaging device
Yukinobu Sugiyama,Seiichiro Mizuno +1 more
- 12 Apr 2006
47
TL;DR: In this article, the first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode, and a third impurity area of a second conductivity type is formed on the substrate.
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Abstract: A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.
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Citations
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TL;DR: In this article, a pixel array unit having a plurality of pixels and a signal processing circuit that has a capacitor operatively configured to process a respective signal output from each of the pixels.
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TL;DR: By altering the structure of a metal's surface, the properties of surface plasmons—in particular their interaction with light—can be tailored, which could lead to miniaturized photonic circuits with length scales that are much smaller than those currently achieved.
Patent
Color imaging array
Bryce Edward Bayer
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TL;DR: In this article, a mosaic of selectively transmissive filters is superposed in registration with a solid state imaging array having a broad range of light sensitivity, the distribution of filter types in the mosaic being in accordance with the above-described patterns.
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TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
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Patent
Active pixel sensor with intra-pixel charge transfer
Eric R. Fossum,Sunetra K. Mendis,Sabrina E. Kemeny +2 more
- 12 Mar 2003
TL;DR: In this paper, an imaging device is formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary MOS semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate and a charge coupled device section formed on the substrate adjacent the photrogate having a sensing node connected to the output transistor and at least one charge coupled
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