1. What are the contributions mentioned in the paper "Single quantum level electron turnstile" ?
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![FIG. 4. (a) Turnstile current as a function of operation signal amplitude (device A, f ¼ 56 MHz, ϵ̄ ¼ ϵ̄0, and eVB ¼ 0.7Δ). The sharp decrease in current indicates the sudden onset of backtunneling. The continuous line is the numerical calculation for the SQS with all parameters determined by the device dc transport properties (see text). The dashed line is the analogous calculation for a SINIS device with normal state resistance RN ¼ 300 kΩ, U ¼ 3.0Δ and assuming quasiequilibrium of electrons in N by electron-phonon relaxation [38]. The arrows indicate the values of Aϵ used in (c). (b) Slope at inflection point of IðVbÞ on the turnstile plateaus, averaged over Aϵ, as a function of temperature (device A). The dashed line is the calculation for the SINIS device, with parameters as in (a). (c) Calculation of the energy distribution of the delivered charge per cycle, for different gate drive amplitudes Aϵ, with parameters as in (a). The negative part of the panel displays the backtunneling contribution. The highest position of the quantum dot level, as determined by the gate modulation, is represented in the inset by the lines of corresponding colors.](/figures/fig-4-a-turnstile-current-as-a-function-of-operation-signal-2ex05pk6.webp)
