Proceedings Article10.1109/SISPAD.1996.865314
Simulation environment for semiconductor technology analysis
Ch. Pichler,R. Plasun,Rudolf Strasser,Siegfried Selberherr +3 more
- 02 Sep 1996
- pp 147-148
TL;DR: The SIESTA project sets out to combine the advantages of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language to ensure a straight-forward definition of complex technology analysis tasks.
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Abstract: A programmable simulation environment for semiconductor technology analysis is presented. The SIESTA project sets out to combine the advantages of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language. It is designed to provide a set of framework services to ensure a straight-forward definition of complex technology analysis tasks. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. LISP objects are used to represent basic entities like process steps, process flows, experiments, and agents for design of experiments (DoE), response surface modeling (RSM), and optimization and fitting modules.
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Citations
Accurate statistical process variation analysis for 0.25-/spl mu/m CMOS with advanced TCAD methodology
TL;DR: In this paper, the effect of statistical process variation on the 0.25-/spl mu/m CMOS performance has been accurately characterized by using a new calibrated TCAD methodology.
An extendable multi-purpose simulation and optimization framework for thermal problems in tcad applications
S. Holzer,Martin Wagner,A. Sheikholeslami,Markus Karner,G. Span,Tibor Grasser,Siegfried Selberherr,Christian Doppler,Mayrhofer Keg +8 more
- 01 Jan 2006
TL;DR: In this paper, the authors present the capabilities of their optimization framework in conjunction with typical applications for thermal problems, and show several optimization examples, where they succeeded to extract electro-thermal material and process parameters.
Comparison of deposition models for a TEOS LPCVD process.
TL;DR: A comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process is presented to meet industrial simulation requirements, e.g. accuracy and fast delivery of results.
References
The Viennese integrated system for technology CAD applications
S. Halama,F. Fasching,Claus Fischer,Hans Kosina,E. Leitner,P. Lindorfer,Ch. Pichler,H. Pimingstorfer,Helmut Puchner,G. Rieger,Gerhard Schrom,T. Simlinger,M. Stiftinger,H. Stippel,E. Strasser,W. Tuppa,K. Wimmer,Siegfried Selberherr +17 more
TL;DR: The general requirements and architectural issues of the data level, the user interface and the task level environment are discussed, and their implementation in VISTA, the Viennese Integrated System for Technology CAD Applications is presented.
16
Process Flow Representation within the VISTA Framework
Ch. Pichler,Siegfried Selberherr +1 more
- 01 Jan 1993
TL;DR: The execution of multi-step simulation sequences involving a number of independent simulation tools is taken care of by the VISTA simulation flow control module which allows for the definition of a simulation task by means of the simulation flow description.
11
TCAD Optimization Based on Task-Level Framework Services
Ch. Pichler,N. Khalil,Gerhard Schrom,Siegfried Selberherr +3 more
- 01 Jan 1995
TL;DR: This paper presents the integration of an external optimizer into the VISTA TCAD framework, allowing for an easy implementation of a variety of task-level applications such as sensitivity analysis tasks, optimization, and RSM extraction.