Simple Method for Phosphorus Diffusion on Oriented P-Type Silicon Using New Phosphorus Gel as Dopant
TL;DR: In this article, a p-type monocristalline silicon pn junction was made using an easier doping method, which combined spin-coating thin film deposition method and solid doping technique.
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Abstract: In this work, we try to make a p-type monocristalline silicon pn junction using an easier doping method. We combined spin-coating thin film deposition method and solid doping technique. This technique can be considered as variety of the SOD method. In this study, phosphorous-based gel compounds was prepared and deposited by spin coating. Heat treatment would thus, after deposition of thin layer, diffuse phosphorus atoms into the substrate to obtain a pn diode. Study by Secondary Ions Mass Spectrometry (SIMS) showed a surface phosphorus concentration of 10 20 at/cm 3 incorporated within the silicon substrate to a depth of 300 nm. The microwave phase-shift (µW-PS) technique is used to determine the bulk lifetime ( τ b) of minority carriers. In this technique, the phase-shift between a microwave beam (10 GHz) and a sine-modulated infrared excitation is related to τb and to the surface recombination velocity (S) (Palais, Clerc, Arcari, Stemmer & Martinuzzi, 2003). The lifetime τb mean values vary from 7 µs for a p-type Silicon to 97 µs for phosphorus-diffused silicon. The surface recombination velocity S varies from around 500 to 1000 cm.s -1 .
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Citations
Study and analysis of the morphological, elemental and electrical properties of phosphorus doped monocrystalline silicon solar cell
Shovasis Kumar Biswas,Mohammad Khairul Basher,M. Khalid Hossain,M. Khalid Hossain,M.A.R. Akand,Moizur Rahman,M R Ahmed,Md. Abdul Matin,S Huque +8 more
- 22 Feb 2019
Abstract: In this study, the impact of diffusion time on monocrystalline silicon solar cell has been analysed morphologically, elementally, and electrically by adjusting diffusion time to establish optimized properties for high-efficiency. P-type raw wafers were prepared for diffusion following cleaning and wet etching operation. POCl3 diffusion was done by varying diffusion time with a constant flow rate of process gases. The morphological and elemental studies were carried out with scanning electron microscope (SEM), and energy dispersive x-ray spectroscopy (EDX) respectively. Four-point probe test and Hall Effect measurement were used for studying the electrical characteristics (sheet resistance, resistivity, conductivity, and bulk concentration). From SEM result analysis, noticeable structural damages were found with the increase of doping time. Surface reflectance measurement (SRM) also supported the morphological distortion. Phosphorus, oxygen, silicon, and boron were traced by EDX analysis. The formation of phosphosilicate glass (PSG), as well as the depth of emitter, has been confirmed from the elemental analysis. The emitter length was varied from 2.5 μm to 9 μm. 5 min doped sample showed minimum surface deformation with maximum light absorbance. An acceptable sheet resistance with a compatible conductivity, mobility, and bulk concentration are also found for 5 min diffusion, which could potentially lead to high-efficient solar cell fabrication.
17
Probe assisted localized doping of aluminum into silicon substrates
Jungjoon Ahn,Jungjoon Ahn,Santiago D. Solares,Lin You,Haneol Noh,Joseph J. Kopanski,Yaw S. Obeng +6 more
TL;DR: In this paper, an atomic force microscopy (AFM) probe assisted localized doping of aluminum into an n-type silicon (100) wafer was demonstrated to generate nanoscale counter-doped junctions within two nanometers of the silicon-air interface.
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Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode
S.M. Iftiquar,Youngwoo Lee,Minkyu Ju,Nagarajan Balaji,S.K. Dhungel,Junsin Yi +5 more
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TL;DR: A large variety of solar cell structures have been proposed with various types of materials, of which p-type c-Si solar cell has been one of the most popular and widely used in commercial production with screen print- ing technique.
Mapping of minority carrier lifetime and mobility in imperfect silicon wafers
TL;DR: In this article, the phase shift between a microwave beam (10 GHz) and a sine-modulated infrared excitation is related to the surface recombination velocity (S ).
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Advanced diffusion system for low contamination in-line rapid thermal processing of silicon solar cells
Daniel Biro,Ralf Preu,O. Schultz,S. Peters,D.M. Huljic,D. Zickermann,R. Schindler,R. Ludemann,Gerhard Willeke +8 more
TL;DR: In this article, a novel diffusion system for in-line rapid thermal diffusion is presented, which has a low thermal mass and a metal free transport system based on the walking beam principle.
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