Journal Article10.1016/0921-5107(91)90124-E
Silicon homoepitaxy using photochemical vapor deposition: a reflection high energy electron diffraction and transmission electron microscopy study
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TL;DR: In this article, defect characterization of epitaxial silicon films grown on Si(100) lightly boron-doped wafers by low temperature photochemical vapor deposition using ArF excimer laser decomposition of Si 2 H 6 is discussed.
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Abstract: Defect characterization of epitaxial silicon films grown on Si(100) lightly boron-doped wafers by low temperature photochemical vapor deposition using ArF excimer laser decomposition of Si 2 H 6 is discussed. The film morphology and crystallinity were investigated by defect etching-Nomarski optical microscopy, reflection high energy electron diffraction and transmission electron microscopy. The growth parameters such as laser power, Si 2 H 6 partial pressure and substrate temperature were varied to study the dependence of crystallinity on these parameters. Single-crystal films with a very low defect density were obtained at 0.08-0.7 W laser power, 5–20 mTorr Si 2 H 6 partial pressure and 250–350°C substrate temperature.
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Citations
Epitaxial silicon growth conditions and kinetics in low‐temperature ArF excimer laser photochemical‐vapor deposition from disilane
TL;DR: In this paper, the authors used an ArF excimer laser beam parallel to the substrate to photodissociate Si2H6 at low temperatures (250-350°C) under laser intensity and Si 2H6 partial pressure conditions that result in low initial photofragment concentrations (< 1013 cm−3).
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Growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100)
TL;DR: In this article, the SiH4 precursors were employed to deposit silicon on both polysilicon and Si(100) at substrate temperatures ranging from 500 to 650°C, and the growth rate and film uniformity were studied as a function of silane kinetic energy.
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ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si 2 H 6 : a simple growth kinetic model
TL;DR: In this article, a growth kinetic model is proposed based on single-photon 193 nm absorption by Si2H6, and chemical reaction of the photofragments as they diffuse to the sub-strate surface.
Modeling of Silicon Deposition Yield at Low Temperature by ArF Excimer Laser Photolysis of Disilane
TL;DR: In this paper, the intrinsic Si epitaxial layers were deposited at low substrate temperatures of 250-350°C using the 193 nm output of an ArF excimer laser to directly dissociate Si2H6.
References
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T. J. Donahue,R. Reif +1 more
TL;DR: A system and a procedure using chemical vapor deposition of silane at very low pressures (<10−2 Torr) have been developed for depositing uniform, specular silicon epitaxial films both with and without plasma enhancement at temperatures as low as 650 °C as mentioned in this paper.
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Structure and origin of stacking faults in epitaxial silicon
TL;DR: Light optical and transmission electron microscopy on epitaxially deposited silicon crystals in [100, [110, and [111] orientation show that growth stacking faults are formed regardless of orientation.
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TL;DR: In this article, remote plasmaenhanced chemical vapor deposition has been applied to achieve silicon homoepitaxy at temperatures as low as 150°C, which is believed to be the lowest temperature reported to date.
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