Journal Article10.1109/JPROC.2017.2669087
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
Pascal Chevalier,Michael Schroter,Colombo R. Bolognesi,Vincenzo d'Alessandro,Maria Alexandrova,Josef Bock,Ralf Flickiger,Sebastien Fregonese,Bernd Heinemann,Christoph Jungemann,Rickard Lovblom,Cristell Maneux,Olivier Ostinelli,Andreas Pawlak,Niccolò Rinaldi,Holger Rucker,G. Wedel,Thomas Zimmer +17 more
- 15 Mar 2017
- Vol. 105, Iss: 6, pp 1035-1050
106
TL;DR: This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications and discusses the specific topics of thermal and substrate effects, reliability, and HF measurements.
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Abstract: This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.
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Citations
Terahertz integrated electronic and hybrid electronic–photonic systems
Kaushik Sengupta,Tadao Nagatsuma,Daniel M. Mittleman +2 more
- 01 Dec 2018
TL;DR: This Review Article examines the development of terahertz integrated electronic and hybrid electronic–photonic systems, considering, in particular, advances that deliver important functionalities for applications in communication, sensing and imaging.
646
Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies
TL;DR: In this paper, the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxide-semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades is reviewed.
SiGe BiCMOS Current Status and Future Trends in Europe
Pascal Chevalier,Wolfgang Liebl,Holger Rücker,Alexis Gauthier,Dirk Manger,Bernd Heinemann,G. Avenier,Josef Bock +7 more
- 01 Oct 2018
TL;DR: The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown and a focus on the ongoing European research activities through the presentation of the TARANTO project, whose main objective is to help developing nanoscale SiGe BiCMOS platforms.
75
SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
Thomas Zimmer,Josef Bock,Fred Buchali,Pascal Chevalier,Michael Collisi,Bjorn Debaillie,Marina Deng,Philippe Ferrari,Sebastien Fregonese,Christophe Gaquiere,Haitham Ghanem,Horst Hettrich,Alper Karakuzulu,Tim Maiwald,Marc Margalef-Rovira,Caroline Maye,Michael Moller,A. Mukherjee,Holger Rucker,Paulius Sakalas,Rolf Schmid,Karina Schneider,Karsten Schuh,Wolfgang Templ,Akshay Visweswaran,Thomas Zwick +25 more
- 11 Jan 2021
TL;DR: In this article, the European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the sub-millimeter-wave and THz range, and the status of the technology process is reviewed and the integration challenges are examined.
70
Programmable terahertz chip-scale sensing interface with direct digital reconfiguration at sub-wavelength scales.
TL;DR: The authors report a methodology for a CMOS-based, programmable THz sensor surface that allows dynamic adaption in all three properties, including frequency, pattern and polarization, in an industry standard 65-nm CMOS process.
References
Cutting-edge terahertz technology
TL;DR: An overview of the status of the terahertz technology, its uses and its future prospects are presented in this article, with a focus on the use of the waveband in a wide range of applications.
6.3K
Present and Future of Terahertz Communications
Ho-Jin Song,Tadao Nagatsuma +1 more
TL;DR: The current progress of terahertz-wave technologies related to communications applications are examined and some issues that need to be considered for the future of THz communications are discussed.
1.3K
An improved de-embedding technique for on-wafer high-frequency characterization
M.C.A.M. Koolen,J.A.M. Geelen,M.P.J.G. Versleijen +2 more
- 09 Sep 1991
TL;DR: In this paper, an improved correction procedure for on-wafer S-parameter measurements has been developed and implemented, which takes the effects of series parasitics into account in a simple, straightforward way.
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
Xiaobing Mei,W. Yoshida,M. Lange,J. Lee,Joe Zhou,Po-Hsin Liu,Kevin M. K. H. Leong,Alex Zamora,Jose G. Padilla,Stephen Sarkozy,Richard Lai,William R. Deal +11 more
TL;DR: In this article, the first terahertz integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process was demonstrated at 1 GHz with 9-dB measured gain at 1.5 GHz.
408
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Basanth Jagannathan,Marwan H. Khater,Francois Pagette,Jae-Sung Rieh,David Angell,H. Chen,John E. Florkey,F. Golan,David R. Greenberg,R.A. Groves,S.-J. Jeng,J. Johnson,E. Mengistu,Kathryn T. Schonenberg,C.M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +20 more
TL;DR: In this paper, a SiGe NPN HBT with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz was reported.
283
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