Patent
Semiconductor substrate processing apparatus including uniformity baffles
Arun Keshavamurthy,Bart van Schravendijk,David G. Cohen +2 more
- 18 Dec 2014
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TL;DR: In this article, a semiconductor substrate processing apparatus for processing semiconductor substrates includes a showerhead module delivering process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor structures are processed, and a baffle arrangement comprises baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams.
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Abstract: A semiconductor substrate processing apparatus for processing semiconductor substrates includes showerhead module delivering process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor substrates are processed. The showerhead module comprises a gas delivery conduit in fluid communication with a cavity at a lower end thereof, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement. The baffle arrangement comprises baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams. The center flow stream exits the baffle arrangement above a central portion of the faceplate, the inner annular flow stream exits the baffle arrangement above an inner annular region of the faceplate, and the outer annular flow stream exits the baffle arrangement above an outer annular region of the faceplate.
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Citations
Patent
Method and apparatus for purging and plasma suppression in a process chamber
Patrick Breiling,Gerber Kevin,Jennifer O'Loughlin,Nagraj Shankar,Pramod Subramonium +4 more
- 06 Feb 2013
TL;DR: In this article, a substrate processing system includes a head portion and a stem portion, which delivers precursor gas to a processing chamber, and a baffle, which is arranged between the head portion of the showerhead and an upper surface of the processing chamber.
80
Patent
Cascade design showerhead for transient uniformity
Dhritiman Subha Kashyap,David G. Cohen,Davinder Sharma +2 more
- 05 Apr 2013
TL;DR: In this article, the authors propose an apparatus for use in semiconductor processing operations to distribute process gases across a semiconductor wafer, which may include one or more annular baffles arranged in a stack of annular layers within a plenum volume of the apparatus.
12
Patent
Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity
Hu Kang,Adrien Lavoie,Shankar Swaminathan,Jun Qian,Chloe Baldasseroni,Frank L. Pasquale,Andrew Duvall,Ted Minshall,Jennifer L. Petraglia,Karl Leeser,David Smith,Sesha Varadarajan,Edward Augustyniak,Douglas Keil +13 more
- 25 Mar 2015
TL;DR: In this article, the parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber, which is used to selectively generate RF plasma in the reaction volume.
9
Patent
Anti-transient showerhead
Edward Sung,Colin F. Smith,Shawn M. Hamilton +2 more
- 24 May 2016
TL;DR: Showerheads for semiconductor processing equipment are disclosed that include various features designed to minimize or eliminate non-uniform gas delivery across the surface of a wafer due to gas flow transients within the showerhead as discussed by the authors.
8
Patent
Plasma suppression behind a showerhead through the use of increased pressure
Breiling Patrick G,Ramesh Chandrasekharan,Edmund B Minshall,Colin F. Smith,Andrew Duvall,Karl Leeser +5 more
- 10 Mar 2016
TL;DR: In this article, a substrate processing system includes a showerhead including a stem portion and a head portion, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume.
6
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TL;DR: In this article, a chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing, and a detection system for detecting the presence of misaligned, cracked or warped substrates in the chamber.
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Patent
Method of delivering gas into reaction chamber and shower head used to deliver gas
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TL;DR: In this article, a method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles.
368
Patent
A programmable multizone gas injector for single-wafer semiconductor processing equipment
Mehrdad M. Moslehi,Cecil J. Davis,Robert T. Matthews +2 more
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TL;DR: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas as mentioned in this paper.
363
Patent
CVD flowable gap fill
Chi-I Lang,Judy Huang,Michael S. Barnes,Sunil Shanker +3 more
- 23 Jul 2009
TL;DR: In this paper, the authors proposed a method to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1, by placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber.
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