Book Chapter10.1533/9780857096401.2.341
Semiconductor disk lasers (VECSELs)
Jennifer E. Hastie,Stephane Calvez,Martin D. Dawson +2 more
- 31 Mar 2013
- pp 341-393
9
TL;DR: Semiconductor disk laser (SDL) as discussed by the authors is a type of VECSEL with oscillation perpendicular to the epitaxial gain structure with an external macroscopic laser resonator.
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Abstract: Semiconductor disk lasers (SDLs), also known as vertical-external-cavity surface-emitting lasers (VECSELs) are optically-pumped semiconductor lasers (OPSLs), with oscillation perpendicular to the epitaxial gain structure with an external macroscopic laser resonator. SDLs have outstanding wavelength flexibility combined with excellent beam quality, and their fundamental spectral coverage is further extended by efficient, intracavity non-linear frequency conversion. This chapter gives a broad overview of the SDL field: design, principles of operation, and typical performance. We review various techniques used for intracavity frequency filtering and conversion, pulsed operation and mode-locking. The trends and applications foreseen as the future drivers of SDL research are discussed.
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Citations
Optically pumped VECSELs: review of technology and progress
TL;DR: In this article, a review of the recent technological developments of VECSELs in connection with the new milestones that continue to pave the way towards their use in numerous applications is presented.
222
Red-Shifted Excitation and Two-Photon Pumping of Biointegrated GaInP/AlGaInP Quantum Well Microlasers
TL;DR: In this paper , whispering gallery mode microdisk lasers made from a range of GaInP/AlGaInP multi-quantum well structures with compositions tailored to red-shifted excitation and emission are presented.
14
Cd diffusion in CdS/ZnSe MQW heterostructures grown by MOVPE for semiconductor disk lasers
M. R. Butaev,M. R. Butaev,Vladimir I. Kozlovsky,Vladimir I. Kozlovsky,V. P. Martovitsky,Yan K. Skasyrsky,D.E. Sviridov +6 more
TL;DR: In this article, the blurring of heterostructure interfaces during growth is investigated, and it is shown that due to the strong mutual diffusion of Cd and Zn through the interfaces, it is possible to form the two ZnSSe/ZnCdSe/CdS/DZnSe multi quantum well (MQW) heterostructures with type II band offsets for blue-green semiconductor disk lasers were grown by metalorganic vapor phase epitaxy (MOVPE) at T = −440°C.
10
Scaling the Power and Tailoring the Wavelength of Semiconductor Disk Lasers
Antti Rantamäki
- 20 Mar 2015
TL;DR: In this article, the authors developed methods for increasing the output power of optically pumped semiconductor disk lasers (SDLs), especially in challenging wavelength regions, by integrating SDL gain elements onto diamond heat spreaders using thin intermediate gold layers.
7
Nanosecond semiconductor disk laser emitting at 496.5 nm
TL;DR: In this article, an optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets was studied.
6
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Arthur L. Schawlow,Charles H. Townes +1 more
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High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
TL;DR: In this paper, the optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting laser (VECSEL) was demonstrated using diode laser pump.
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InGaAs-GaAs quantum-dot lasers
Dieter Bimberg,N. Kirstaedter,Nikolai N. Ledentsov,Zh. I. Alferov,Petr S. Kop'ev,Victor M. Ustinov +5 more
TL;DR: The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl middot/cm/sup -2/m at 300 K as mentioned in this paper.
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Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass"
Eli Yablonovitch,E.O. Kane +1 more
TL;DR: In this paper, a combination of strain and quantum confinement is proposed to reduce the valence band effective mass and to lessen the laser threshold requirements, which results in a significant penalty in terms of threshold current density, carrier injection level, and excess Auger and other nonradiative recombination.
475
Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
TL;DR: In this paper, the authors describe the design, fabrication, and measured characteristics of the high-power optically pumped-semiconductor (OPS) vertical-external-cavity surface-emitting lasers (VCSELs).
396