Journal Article10.1109/T-ED.1983.21256
Semiconductor device simulation
146
TL;DR: The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional and three-dimensional models, including several choices of variables, including the basic semiconductor equations.
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Abstract: The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables. Our examples illustrate results obtained from finite-difference and finite-element implementations. We stress the necessary 3D calculations for small-size MOSFET's. Numerical results on inter-electrode capacitive coupling are included.
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Transient Simulation of Silicon Devices and Circuits
TL;DR: An overview of the physical principles and numerical methods used to solve the coupled system of non-linear partial differential equations that model the transient behavior of silicon VLSI device structures and a simple data structure for nonsymmetric matrices with symmetric nonzero structures is presented.
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Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
TL;DR: In this paper, the effects of fluctuations in dopant distribution on the MOSFET threshold voltage and their dependence on the scaling were investigated using device simulation, and it was found that the thresholdvoltage value deviation is mostly affected by fluctuating dopant distributions at the substrate surface, rather than throughout the depletion layer.
131
MOSFET test structures for two-dimensional device simulation
TL;DR: A methodology to verify the robustness of the test structures is described and a set of grid specifications was generated for simulation accuracy and computational efficiency of a device simulation program.
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A comprehensive two-dimensional VLSI process simulation program, BICEPS
TL;DR: Bell Integrated Circuit Engineering Process Simulator (BICEPS) is a comprehensive VLSI process-simulation program developed at Bell Laboratories BICEPS incorporates the most up-to-date physical models and efficient numerical algorithms to make it a highly robust and general-purpose program as discussed by the authors.
89
Triangular meshes for regions of complicated shape
B. Joe,R. B. Simpson +1 more
TL;DR: A method using techniques of computational geometry for triangular mesh generation for regions with complicated polygonal boundaries in the plane is presented, which can be extended to provide additional control of the triangulation by a mesh distribution function.
79
References
Computer Simulation Using Particles
R W Hockney,J W Eastwood +1 more
- 01 Jan 1981
TL;DR: Computer experiments using particle models A one-dimensional plasma model The simulation program Time integration schemes The particle-mesh force calculation The solution of field equations Collisionless particle models Particle-particles/particle/particles algorithms Plasma simulation Semiconductor device simulation Astrophysics
5.7K
Global approximate Newton methods
Randolph E. Bank,D. J. Rose +1 more
TL;DR: In this paper, a class of globally and quadratically converging algorithms for a system of nonlinear equations,g(u)=0, whereg is a sufficiently smooth homeomorphism, were derived.
306