Semiconductor device and method for producing the same

TL;DR: In this paper, a glass substrate is adhered onto the surface of a silicon wafer with a pad electrode and a via hole is formed along the dicing line center center Ds.

Abstract: The present invention provides a semiconductor device and a method for producing the same by which the reliability of the device is improved, wherein a glass substrate 56 is adhered onto the surface of a silicon wafer 51 formed with a pad electrode 53, next, a via hole 81 extending from the rear surface of the silicon wafer to the pad electrode 53 is formed, in the meantime, a trench 82 extending along the dicing line center Ds and passing through the silicon wafer 51 from the rear surface of the silicon wafer 51 is formed, then, a buffer layer 61, a wiring layer 63, a solder mesh 65 and a solder ball 66 are formed on the rear surface of the silicon wafer 51 by the steps including the step of heat treatment following At last, the silicon wafer 51 supported by glass substrate 56 is diced through dicing into respective silicon chips 51a