Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions
TL;DR: In this article, the authors investigate the resistance switching behaviors of a complementary resistive switching (CRS) device based on two anti-serial Au/BaTiO3/Nb:SrTiO 3 ferroelectric tunnel junctions (FTJ) and show a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming and multi-switching behaviors.
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Abstract: Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.
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Figures
FIG. 4. (a) Hysteretic behavior of the PFM amplitude and phase signals measured on the bare surface of the BTO film as a function of the bias applied via a conducting tip. (b) Current-Vwrite hysteresis behavior measured by 0.1 V after each Vwrite pulse ( 6 V<Vwrite < 6 V). (c), (d), and (e) Schematic diagram of the electronic potential profile of Au/BTO/NSTO/BTO/Au stack, before and after positive and negative pulse voltage stressing, respectively. 
FIG. 1. Structure of the BTO/NSTO heterostructure: (a) High-resolution TEM image of the BTO/NSTO of the selected region; (b) The electron diffraction pattern of the BTO/NSTO heterostructure. (c) Schematic of the measurement configuration. (d) Currentvoltage behavior of Au/BTO/NSTO junctions, measured with top-top electrode configuration. (e) Butterfly-like R–Vwrite hysteresis loops under the three continuous rounds of Vwrite-sweep, measured by 0.5 V after the operation of each Vwrite pulse (pulse-on: 10 ms, pulse-off 1.0 s). 
FIG. 3. R–Vwrite hysteresis loops measured under the reading voltages of 2.1 V, 1 V, 0.8 V, 0.4 V, 0.2 V, 0.5 V, 0.6 V, 1.0 V, and 2.1 V, respectively. ![FIG. 2. (a) Current-Vwrite hysteresis loops, measured by 0.1 V after each Vwrite pulse, with Vwrite 2 [ 6.0 V, 6.0 V] and [ 3.6 V, 6.0 V], respectively. (b) Endurance characters of the A, B, and C states, measured by 0.1 V during the intervals of pulses of 6 V,](/figures/fig-2-a-current-vwrite-hysteresis-loops-measured-by-0-1-v-1cbqlmir.png)
FIG. 2. (a) Current-Vwrite hysteresis loops, measured by 0.1 V after each Vwrite pulse, with Vwrite 2 [ 6.0 V, 6.0 V] and [ 3.6 V, 6.0 V], respectively. (b) Endurance characters of the A, B, and C states, measured by 0.1 V during the intervals of pulses of 6 V,
![FIG. 2. (a) Current-Vwrite hysteresis loops, measured by 0.1 V after each Vwrite pulse, with Vwrite 2 [ 6.0 V, 6.0 V] and [ 3.6 V, 6.0 V], respectively. (b) Endurance characters of the A, B, and C states, measured by 0.1 V during the intervals of pulses of 6 V,](/figures/fig-2-a-current-vwrite-hysteresis-loops-measured-by-0-1-v-1cbqlmir.webp)
Citations
A review on all-perovskite multiferroic tunnel junctions
Yuewei Yin,Yuewei Yin,Qi Li +2 more
TL;DR: In this paper, the authors reviewed the recent progress of all-perovskite multiferroic tunnel junctions with a ferroelectric barrier sandwiched between two ferromagnetic electrodes.
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Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor
Miaocheng Zhang,Qi Qin,Xingyu Chen,Runze Tang,Aoze Han,Suhao Yao,Ronghui Dan,Qiang Wang,Yu Wang,Honghui Gu,Hao Zhang,Ertao Hu,Lei Wang,Jianguang Xu,Yi Tong +14 more
TL;DR: In this paper , a hybrid ferroelectric Cu/MXene/PZT memristor has been firstly demonstrated, where two-dimensional (2D) material Ti3C2 MXene was synthesized and inserted into traditional PZT (PbZr0.52Ti0.48O3) memristors for performance enhancement.
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"Exploring Bipolar Resistive Switching Behavior of Sprayed BaTiO3 Thin Films for Nonvolatile Memory Application”
Lahu D. Namade,Amitkumar R. Patil,Sonali R. Jadhav,Tukaram D. Dongale,Keshav Y. Rajpure +4 more
- 01 Apr 2024
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High-performance complementary resistive switching in ferroelectric film
Pan Zhang,Wenjing Zhai,Zhibo Yan,Xiang Li,Yongqiang Li,S. H. Zheng,Y. S. Tang,Lin Lin,J.-M. Liu,J.-M. Liu +9 more
TL;DR: In this article, the complementary resistive switch (CRS) in a single layer of ferroelectric LiTaO3 film has been shown to offer a promising logic-in-memory functionality and is a potential solution to the von Neumann bottleneck problem.
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Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO3 Induced by Simple Annealing.
Xia-Xia Liao,Yufeng Zhang,Jiaou Wang,Junyong Kang,Jinbin Zhang,Jizheng Wang,Jin-Cheng Zheng,Hui-Qiong Wang +7 more
TL;DR: Resistance switching response is displayed in the annealed SrTiO3 single crystal and suggests a possible simplified route to tune the conductivity of Sr TiO3 and further develop novel resistance switching materials.
1
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