Journal Article10.1109/JPHOTOV.2013.2289353
Scanning Laser-Beam-Induced Current Measurements of Lateral Transport Near-Junction Defects in Silicon Heterojunction Solar Cells
Michael G. Deceglie,Hal S. Emmer,Zachary C. Holman,Antoine Descoeudres,Stefaan De Wolf,Christophe Ballif,Harry A. Atwater +6 more
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TL;DR: In this article, laser-beam-induced current (LBIC) measurements on silicon heterojunction solar cells indicate the length scale over which photogenerated carriers are sensitive to local defects at the amorphous silicon/crystalline silicon heterjunction interface.
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Abstract: We report the results of scanning laser-beam-induced current (LBIC) measurements on silicon heterojunction solar cells that indicate the length scale over which photogenerated carriers are sensitive to local defects at the amorphous silicon/crystalline silicon heterojunction interface. The defects were intentionally created with focused ion beam irradiation, enabling us to study how defects at a predefined and known location affect carrier collection and transport in neighboring regions where the device remains pristine. The characteristic length scale over which carriers in the pristine areas of the device are vulnerable to loss via recombination in the adjacent defective region increases to over 50 μm as the device is forward biased. For photocarriers generated near the amorphous-crystalline interface, LBIC measurements suggest that lateral transport in the near-junction inversion layer in the c-Si is an important transport mechanism.
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Citations
High-efficiency crystalline silicon solar cells: status and perspectives
TL;DR: In this article, the authors review the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective and give an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrierselective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic-inorganic perovskite materials.
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Characterization of silicon heterojunctions for solar cells
Jean-Paul Kleider,José Alvarez,A.V. Ankudinov,Alexander S. Gudovskikh,E.V. Gushina,M. Labrune,Olga Maslova,Wilfried Favre,Marie-Estelle Gueunier-Farret,Pere Roca i Cabarrocas,E. I. Terukov +10 more
- 01 Jan 2010
TL;DR: In this paper, the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) was revealed.
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Gap Passivation Structure for Scalable N-Type Interdigitated all Back Contact Silicon Hetero-Junction Solar Cell
Lei Zhang,Ujjwal Das,Steven Hegedus +2 more
- 01 Jun 2017
TL;DR: In this paper, the authors investigated four variations of gap passivation structure having a wide range of interface defect density (D it ) and interface charge (Q pass ) and demonstrated surface recombination velocity (SRV) 21.5% achievable by the simplified cell process with proper light management.
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Advanced Silicon Solar Cell Device Physics and Design
Michael Gardner Deceglie
- 01 Jan 2013
TL;DR: In this article, a microscopic understanding of solar cell optoelectronic performance and its impact on cell optimization is presented, in three solar cell platforms: thin-film crystalline silicon, amorphous/crystalline silicon heterojunctions, and thinfilm cells with nanophotonic light trapping.
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References
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Martin A. Green,Mark J. Keevers +1 more
TL;DR: An updated tabulation of the optical properties of intrinsic silicon relevant to solar cell calculations is presented in this article, where the absorption coeficient, refractive index and extinction co-efficient at 300 K are tabulated over the 0.25-1.45 μm wavelength range at 0.01 μm intervals.
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High-efficiency Silicon Heterojunction Solar Cells: A Review
Stefaan De Wolf,Antoine Descoeudres,Zachary C. Holman,Christophe Ballif +3 more
- 08 Mar 2012
TL;DR: Silicon heterojunction solar cells as mentioned in this paper consist of thin amorphous silicon layers deposited on crystalline silicon wafers, which enables energy conversion efficiencies above 20% at the industrial production level.
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
Makoto Tanaka,Mikio Taguchi,Takao Matsuyama,T. Sawada,Shinya Tsuda,Shoichi Nakano,Hiroshi Hanafusa,Yukinori Kuwano +7 more
TL;DR: A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell has been developed based on ACJ (Artificially Constructed Junction) technology as mentioned in this paper.
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