Resistance random access memory
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TL;DR: In this article, the authors classify resistive random access memory (RRAM) devices into four categories according to different resistive switching mechanisms, from which the four elements are (1) anion-type RRAM: redox reaction and migration of oxygen ions, (2) cation-type RDAM: the stretch of C C C bond lengths due to oxygen and hydrogen dual ions, and (3) oxide-based electrode: oxygen accumulation in oxide based electrode.
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About: This article is published in Materials Today. The article was published on 15 Oct 2014. The article focuses on the topics: Resistive random-access memory & Flash memory.
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Citations
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
TL;DR: Recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed.
A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
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Nonvolatile Memories Based on Graphene and Related 2D Materials.
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TL;DR: An overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories.
Oxide-based RRAM materials for neuromorphic computing
XiaoLiang Hong,Desmond Jia Jun Loy,Putu Andhita Dananjaya,Funan Tan,CheeMang Ng,Wen Siang Lew +5 more
TL;DR: A broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field is given.
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Sub-nanosecond memristor based on ferroelectric tunnel junction.
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TL;DR: A high performance memristor based on a Ag/BaTiO3 /Nb:SrTiO 3 ferroelectric tunnel junction with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs.
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