Proceedings Article10.1117/12.851395
Research on the Optical and Electrical Properties of ITO Thin Film Using Magnetron Sputtering
Changlong Cai,Yujia Zhai,Jing Huang,Xu Yang,Weiguo Liu,Aihua Gao +5 more
- 04 Dec 2009
- Vol. 7522, pp 752268
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TL;DR: In this article, the effects of sputtering pressure, oxygen-argon flow ratio and sputtering power on photoelectrical performance of ITO thin films were investigated, and the results showed that, the optimum parameters of the ITO films prepared are: spitching pressure 0.6Pa, oxygen argon flow ratio 1:40, spitching power 108W, and resistivity is 8.9197 × 10 -3.cm.
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Abstract: Due to excellent photoelectrical properties, ITO thin films become the indispensable flat transparent electrode for their practical applications in the flat-p anel displays, touch screens, solar cells and electrochromic devices. Therefore, its very necessary to study photoelectrical properties of ITO films. In this paper, ITO thin films were prepared on the glass substrates by DC magnetron sputtering technology, and measured the transmittance of ITO thin films in the visible region using the spectrophotometer; the resistivities were measured with the four-probe instrument. The effects of sputtering pressure, oxygen-argon flow ratio and sputtering power was researched on photoelectrical performance of ITO thin films. The results show that, the optimum parameters of ITO films prepared are: sputtering pressure 0.6Pa, oxygen-argon flow ratio 1:40, sputtering power 108W. The average transmittance in the visible area is 81.18%, resistivity is 8.9197 × 10 -3 .cm. Keywords: DC magnetron sputtering, ITO thin film, process parameters, photoelectric properties
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Citations
•Journal Article
Low Temperature Deposition and Photoelectric Properties of ITO Films
TL;DR: The photoelectric properties of ITO films were studied with different deposition parameters such as the temperature of substrates, power, pressure, H2O gas partial pressure during direct current magnetron sputtering at low temperature as mentioned in this paper.
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References
•Journal Article
Analysis of Orthogonal Experiments on ITO Films Prepared by DC Magnetron Sputtering
TL;DR: In this paper, indium tin oxide (ITO) films were deposited by DC magnetron sputtering system and experimentations were scheduled by orthogonal test table L32(48).
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•Journal Article
Effect of Indium and Tin Oxidation on Photoelectric Behavior of ITO Films
TL;DR: The results showed that mean transmittance increases with Sn4+ concentration in the films increasingMeanwhile minimum electrical resistance of 62×10-4 Ω·cm can be obtained after annealing at 200 ℃ for 1 h in the air as discussed by the authors.
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•Journal Article
Low Temperature Deposition and Photoelectric Properties of ITO Films
TL;DR: The photoelectric properties of ITO films were studied with different deposition parameters such as the temperature of substrates, power, pressure, H2O gas partial pressure during direct current magnetron sputtering at low temperature as mentioned in this paper.
1