Reduction of Leakage Current in Tristate Inverter Using High-K Dielectric

TL;DR: In CMOS applications as device scaling, obeying Moore's law reduces the active area of the devices to nearly atomic dimensions The high-k dielectrics need to be used to prevent the tunneling effects which increase the leakage currents as discussed by the authors.

Abstract: In CMOS applications as device scaling, obeying Moore’s law reduces the active area of the devices to nearly atomic dimensions The high-k dielectrics need to be used to prevent the tunneling effects which increase the leakage currents In recent years, several emerging high-k materials have attracted enormous attention as potential candidates for electronic devices Silicon dioxide (SiO2) has been used as dielectric for more than 40 years because of its manufacturability and ability to deliver continued transistor performance improvements as it has been made ever thinner Among the many potential high-k materials, LaAlO3 has recently attracted much attention due to its many advantages such as high dielectric constant, high bandgap, and amorphous structure up to high temperatureIn CMOS applications as device scaling, obeying Moore’s law reduces the active area of the devices to nearly atomic dimensions The high-k dielectrics need to be used to prevent the tunneling effects which increase the leakage currents In recent years, several emerging high-k materials have attracted enormous attention as potential candidates for electronic devices Silicon dioxide (SiO2) has been used as dielectric for more than 40 years because of its manufacturability and ability to deliver continued transistor performance improvements as it has been made ever thinner Among the many potential high-k materials, LaAlO3 has recently attracted much attention due to its many advantages such as high dielectric constant, high bandgap, and amorphous structure up to high temperature