Patent
Reactant gas ejector head
Yukio Fukunaga,Masao Saitoh,Hiroyuki Shinozaki,Kiwamu Tsukamoto +3 more
- 13 Oct 1997
216
TL;DR: A reactant gas ejector head enables a process gas mixture of a uniform concentration and composition to be delivered to the surface of a substrate in a stable and uniform thermodynamic state by preventing premature reactions to occur along the gas delivery route as mentioned in this paper.
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Abstract: A reactant gas ejector head enables a process gas mixture of a uniform concentration and composition to be delivered to the surface of a substrate in a stable and uniform thermodynamic state by preventing premature reactions to occur along the gas delivery route. The reactant gas ejector head comprises an ejection head body having a back plate and a nozzle plate for defining a gas mixing space therebetween. The nozzle plate has numerous gas ejection nozzles. A gas supply pipe is communicated with the ejection head body through a center region of the back plate so as to separately introduce at least two types of gaseous substances into the mixing space. Gas distribution passages are formed between the back plate and the nozzle plate in such a way as to guide the at least two types of gaseous substances from the gas supply pipe to be directed separately towards peripheral regions of the gas mixing space.
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Citations
Patent
Substrate Processing Apparatus
Tamami Takahashi,Mitsuhiko Shirakashi,Kenya Ito,Kazuyuki Inoue,Kenji Yamaguchi,Masaya Seki +5 more
- 16 Feb 2005
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
644
Patent
Plasma uniformity control by gas diffuser hole design
Soo Young Choi,John M. White,Qunhua Wang,Li Hou,Ki Woon Kim,Shinichi Kurita,Tae Kyung Won,Suhail Anwar,Beom Soo Park,Robin L. Tiner +9 more
- 17 Jan 2005
TL;DR: In this paper, a gas diffuser plate for distributing gas in a processing chamber is described, which includes a diffuser with an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser.
420
Patent
Gas distribution apparatus for semiconductor processing
Rajinder Dhindsa,Fangli Hao,Eric Lenz +2 more
- 12 Jun 2000
TL;DR: In this paper, a gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate is described, which includes a support plate and a showerhead.
388
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Plasma uniformity control by gas diffuser curvature
Soo Young Choi,Beom Soo Park,John M. White,Robin L. Tiner +3 more
- 01 Jul 2005
TL;DR: In this paper, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages.
325
Patent
Deposition reactor having vaporizing, mixing and cleaning capabilities
Craig Metzner,Turgut Sahin,Gregory F. Redinbo,Pravin K. Narwankar,Liu Patricia M +4 more
- 27 Oct 1998
TL;DR: In this article, an integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits.
315
References
Patent
A programmable multizone gas injector for single-wafer semiconductor processing equipment
Mehrdad M. Moslehi,Cecil J. Davis,Robert T. Matthews +2 more
- 29 Dec 1992
TL;DR: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas as mentioned in this paper.
363
Patent
Reactant gas ejector head and thin-film vapor deposition apparatus
Takeshi Murakami,Noriyuki Takeuchi,Hiroyuki Shinozaki,Kiwamu Tsukamoto,Yukio Fukunaga,Akihisa Hongo +5 more
- 10 Jun 1996
TL;DR: In this article, a reactant gas ejector head in a thin-film vapor deposition apparatus includes at least two reaction inlet passages for introducing reactant gases, a gas mixing chamber for mixing reactive gases introduced from the reactant inlet passage, and a nozzle disposed downstream of the mixing chamber to rectify the mixed gases from the gas mixing chambers into a uniform flow and applying the uniform flow to a substrate.
218
Patent
Showerhead for a gas supplying apparatus
Gil-Gwang Lee,K. Fujihara,Kyu-hwan Chang +2 more
- 08 Dec 1994
TL;DR: In this paper, a gas supply apparatus for semiconductor device manufacturing is described, which provides a showerhead for evenly supplying various kinds of gases to a reaction chamber, thereby improving the uniformity of the film thickness.
155
Patent
Surface processing apparatus
Masao Kubodera,Masaki Narushima,Masahito Ozawa,Hiromi Kumagai,Tomihiro Yonenaga,Sumi Tanaka +5 more
- 12 Nov 1992
TL;DR: In this article, the authors present a surface processing apparatus which performs heating processing of an object of heating which is mounted on a mounting device provided inside a process container, and which includes a plural number of lamps provided so as to oppose a rear surface of a processing surface of the object of processing.
60
Patent
MOCVD method and apparatus
John W. Benko,Jerome Levkoff,Daniel Christopher Sutryn,Montri Viriyayuthakorn +3 more
- 29 Jan 1990
TL;DR: In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16).
47
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