Journal Article10.1016/0040-6090(75)90251-5
Radiation effects on solid state diffusion
Y. Adda,M. Beyeler,G. Brebec +2 more
104
TL;DR: In this paper, the authors present the methods for describing the evolution of irradiation defects as a function of temperature, defect rate production, sink density etc and discuss the equations which allow the diffusion coefficient under irradiation to be calculated.
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About: This article is published in Thin Solid Films. The article was published on 01 Jan 1975.
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Citations
The structure and properties of metal-semiconductor interfaces
TL;DR: In this article, the contributions of surface science research to the understanding of metal-semiconductor interfaces are surveyed and a wide range of ultra-high vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of MSS interfaces.
885
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Phase Stability Under Irradiation
K.C Russell
- 01 Apr 1985
TL;DR: In this paper, a systematic review of experimentals observations of irradiation-altered phase stability is presented, including enhanced nucleation on displacement cascades, precipitation induced by solute segregation to defect sinks, nucleation of wrong phases, disordering and amorphization, Frenkel pair recombination driven precipitate, and inverse Ostwald ripening.
284
Ion beam mixing in metallic and semiconductor materials
Michael Nastasi,James W. Mayer +1 more
TL;DR: In this article, the basics of the ion mixing phenomenon are described and discussed, and the process is examined by considering only ballistic and kinematic effects associated with collisions between projectile and target atoms, and how collision cascades and the evolution of dense energy spikes affect the mixing process.
183
Ion-induced silicide formation in niobium thin films
S. Matteson,J. Roth,Nicolet +2 more
TL;DR: In this article, MeV 4He backscattering and X-ray diffraction analysis were used to examine the intermixing of niobium thin films on single-crystal silicon during 28Si+ ion bombardment.
122
Radiation Effects in Analysis of Inorganic Specimens by TEM
L. W. Hobbs
- 01 Jan 1979
TL;DR: In the practice of analytical electron microscopy, particularly at near-atomic resolution, one is forced by the exigencies of statistics and the briefness of the encounter between fast electrons and the specimen, to use upwards of 104 electrons per A2 in order to acquire information about the identity and position of a single atom as discussed by the authors.
113
References
Dynamics of Radiation Damage
TL;DR: In this article, the authors studied the effect of low and moderate energies (up to 400 ev) on a model representing copper and found that the resulting damaged configurations are composed of interstitials and vacancies and that the interstitial is found to reside in a split configuration, sharing a lattice site with another atom.
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Defects and Radiation Damage in Metals
M. W. Thompson
- 01 Jan 1969
TL;DR: In this paper, the authors present a survey of point defect clusters in irradiated metals, including extended defects, point defects, collision cascade, and point defects clusters in point defects.
652
Radiation-induced voids in metals: ed. by J. W. Cobbett and L. C. Ianiello. Proceedings of an International Conference held at Albany, N.Y., in June, 1971. (Published by the U.S. Atomic Energy Research Commission, 1972. 882 pp. Available as CONF-710601 for $9.00 from National Technical Information Service, U.S. Dept. of Commerce, Springfield, Va. 22151)
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