Journal Article10.1016/J.JALLCOM.2013.06.095
Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
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TL;DR: In this article, a programmable metallization cell based on amorphous La0.79Sr0.21MnO3 (a-LSMO) thin films for nonvolatile memory applications was demonstrated.
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About: This article is published in Journal of Alloys and Compounds. The article was published on 15 Dec 2013. The article focuses on the topics: Amorphous solid & Programmable metallization cell.
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Citations
State of the art of metal oxide memristor devices
Baker Mohammad,Maguy Abi Jaoude,Vikas Kumar,Dirar Homouz,Heba Abu Nahla,Mahmoud Al-Qutayri,Nicolas Christoforou +6 more
TL;DR: In this article, the authors outline the recent advancements and characteristics of metal oxide memristive devices, with a special focus on their established resistive switching mechanisms and key challenges associated with their fabrication processes including the impeding criteria of material adaptation for the electrode, capping, and insulator component layers.
Research Progress in Rare Earth-Doped Perovskite Manganite Oxide Nanostructures
TL;DR: An overview of the state of art in the studies on the fabrication, structural characterization, physical properties, and functional applications of rare earth-doped perovskite manganite oxide nanostructures is given.
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
Somsubhra Chakrabarti,Subhranu Samanta,Siddheswar Maikap,S. Z. Rahaman,S. Z. Rahaman,Hsin-Ming Cheng +5 more
TL;DR: Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have been investigated for the first time.
An Efficient Heterogeneous Memristive xnor for In-Memory Computing
TL;DR: A novel memristor-based xnor gate that enables the execution of xnor/xor function in the memristive crossbar memory and is the first native stateful xnor logic implementation, to the best of the authors' knowledge.
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Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure
Sourav Roy,Siddheswar Maikap,G. Sreekanth,Mrinmoy Dutta,Debanjan Jana,Y.-Y. Chen,Jer-Ren Yang +6 more
TL;DR: In this paper, the defects in the Cu:AlO x /TaO x/TiN structure have been exploited to enhance memory characteristics, such as device-to-device uniformity, lower formation voltage and RESET current, longer read endurance, and data retention.
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References
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