Product wafer junction leakage measurement using corona and a kelvin probe

TL;DR: In this paper, a computer-implemented method for determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer is presented.

TL;DR: In this paper, computer-implemented methods and systems for detecting defects in a reticle design pattern are provided, which illustrate how the reticle pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process.

TL;DR: A membrane probing assembly includes a probe card with conductors supported thereon, wherein the conductors include at least a signal conductor located between a pair of spaced apart guard conductors as discussed by the authors.

TL;DR: In this article, a method for evaluating reticle layout data is presented, which includes generating a simulated image using the reticle layouts data as input to a model of a reticle manufacturing process.

TL;DR: In this article, a method for measuring the thickness of very thin oxide layers on a silicon substrate is proposed, where a corona discharge source repetitively deposits a calibrated fixed charge density on the surface of the oxide and the resultant change in oxide surface potential for each charge deposition is measured.

TL;DR: In this article, the dopant concentration of a semiconductor wafer is determined using a contactless technique, where a temporary P-N junction is formed in the surface of the wafer using corona discharge and the area of the junction is measured, and the depletion region is collapsed using light, and as depletion region collapses, the surface potential is measured as a function of time.

TL;DR: In this article, a method and apparatus comprises heating a wafer to a temperature sufficient to temperature stress the wafer and enable ion motion, where the wafers are initialized in a measurement region with a non-contact corona discharge of a first polarity until a first dielectric field is developed, wherein any mobile ions present in the surface or at an interface move to a substrate/dielectric interface.

TL;DR: In this paper, an attenuator with a plurality of current dividers coupled in cascade is described, and the leakage current is equal to the known current entering the differential amplifier less the measured current divided by m, the attenuation provided by the attenuators.