Proceedings Article10.1109/IRPS.1978.362825
Process Testing for Reliability Control
Walter H. Schroen
- 01 Apr 1978
- pp 81-87
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TL;DR: There is a rapidly increasing trend to apply silicon integrated circuits in microprocessors to the control of complete systems, including consumer products, automobiles, and distributed communication, necessitating a functional reliability much higher than in traditional applications.
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Abstract: There is a rapidly increasing trend to apply silicon integrated circuits (ICs) in microprocessors to the control of complete systems. A few examples are consumer products, automobiles, and distributed communication. These systems are complex and orders of magnitude more expensive than the microprocessors, necessitating a functional reliability of the microprocessors and ICs much higher than in traditional applications. The need for higher reliability is particularly demanding in applications which involve operating extremes of temperature, humidity, and electrical operation, e.g. in engine control of cars.
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Walter Schroen,William W. Hooper +1 more
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A Process Control Test for Lateral Charge Spreading Susceptibility
George A. Brown,Keith Lovelace,Charles L. Hutchins +2 more
- 01 Apr 1973
TL;DR: In this article, a rapid process control stress test is described, for use in evaluating the susceptibility of MOS circuits-to lateral charge spreading and subsequent channel formation, and measurements of the temperature, time, and stress voltage dependence of the induced channel conductance are described, and these lead to specification of the standardized stress conditions for the test procedure.
8
Failure Analysis of Surface Inversion
Walter H. Schroen
- 01 Apr 1973
TL;DR: In this article, the key causes of surface inversion, such as electronic and ionic charges, surface and bulk contamination, and leakage mechanisms, are highlighted, and a number of widely used failure analysis techniques are described.
7
Materials Quality and Process Control in Integrated Circuits Manufacture
Walter H. Schroen
- 01 Jan 1977
TL;DR: In this article, the authors summarized the recent advances in understanding of silicon microdefect formation and annihilation and selected quantitative techniques for controlling materials quality, device processing, and device parameters.
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