Patent
Power semiconductor element
Edmund Dr Rer Nat Burte,Hubert Dr Rer Nat Borgmann +1 more
- 09 Jul 1988
21
TL;DR: In this paper, the authors proposed a metallisation consisting of at least four sublayers for a semiconductor body having a large active area according to the invention ensuring the bonding quality required, especially for large contact areas.
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Abstract: Known power semiconductor elements for high current carrying capacity (permissible current loading, ampacity) have a contact layer structure of the semiconductor body which does not meet the requirement of solderable and/or pressure-bondable, mechanically stable and satisfactorily adhering contact electrodes. The metallisation, consisting of at least four sublayers, for a semiconductor body having a large active area according to the invention ensures the bonding quality required, especially for large contact areas. The metallisation consists of a first layer made of aluminium, a second layer made of chromium or titanium as an adhesive layer and as a diffusion barrier for the aluminium, a solderable third layer made of nickel, and a final protective layer made of gold or palladium or alternatively of a solderable layer containing one sublayer each made of nickel and copper, copper at the same time being the outermost layer or possibly further being covered with gold or palladium. Use in components and assemblies of high current carrying capacity in power electronics.
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Citations
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References
Porosity in thin Ni/Au metallization layers
TL;DR: In this article, the porosity was observed in thin films of Ni covered with Au and supported on oxidized silicon wafers, and it has been shown that a porous, discontinuous thin Au film is thermodynamically stable.
23
Patent
Multilayer ohmic contact for weakly doped semiconductor p:zone - has aluminium, then titanium, nickel or chromium and finally silver layer
Gogola Manfred,Wedermann Klaus +1 more
- 07 Apr 1977
TL;DR: In this article, a multi-layer ohmic terminal contact on a p-type relatively weakly doped zone, which is exposed to high temps, is presented. But it is not suitable for contact with high temperature.
2