Journal Article10.1063/1.351416
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
Heemyong Park,Mark E. Law +1 more
34
TL;DR: In this paper, point defect models and point defect kinetics are compared with experimental results for intrinsically doped material, and the effective binding energies for boron defect and phosphorus defect pairs are experimentally determined for both experimental conditions and fit to Arrhenius relationships.
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Abstract: Point defect kinetics are important for understanding and modeling dopant diffusion in silicon. This article describes point defect models and compares them with experimental results for intrinsically doped material. Transient dopant diffusion due to low dose silicon implant damage can be modeled with the same parameters as oxidation enhanced diffusion, and therefore provides an additional technique to probe point defect behavior. Parameters are extracted consistently for both experimental conditions and fit to Arrhenius relationships. The theory of dopant‐defect pairing is found to be crucial in modeling the implantation damage effects, and the effective binding energies for boron‐defect and phosphorus‐defect pairs are experimentally determined.
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Citations
Ion beams in silicon processing and characterization
Eric Chason,S. T. Picraux,J. M. Poate,J. O. Borland,Michael I. Current,T. Diaz de la Rubia,D. J. Eaglesham,O. W. Holland,Mark E. Law,Charles W. Magee,James W. Mayer,John Melngailis,Al F. Tasch +12 more
TL;DR: In this paper, the authors review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed.
286
Boron diffusion in silicon: the anomalies and control by point defect engineering
TL;DR: In this paper, the authors review the history and recent progress in point defect engineering (PDE) and point defect repair (PDR) techniques, such as carbon co-implant, multiple step annealing, and PDE with high energy ion bombardments.
140
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
Mark E. Law,Stephen M. Cea +1 more
TL;DR: The commonly used models for implantation, diffusion, and material growth are described and the supporting numerical techniques are described.
100
Species and dose dependence of ion implantation damage induced transient enhanced diffusion
TL;DR: In this article, the effect of ion implantation on the transient enhanced diffusion (TED) behavior of a boron marker layer in silicon has been studied and a consistent parameter set has been found to fit the data to a reasonable ex...
84
Intrinsic Point Defects
Peter Pichler
- 01 Jan 2004
TL;DR: In this paper, the intrinsic point defects play important roles in nearly all theories of impurity diffusion in silicon, and the properties of intrinsic point defect are reviewed in the following sections.
69
References
Point defects and dopant diffusion in silicon
TL;DR: In this paper, the authors present the current state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion.
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Computer-aided design
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A systematic analysis of defects in ion-implanted silicon
TL;DR: In this paper, a classification scheme for implant-related damage which arise upon annealing consisting of five categories is presented, and the most common forms of this damage are microtwins, hairpin dislocations and segregation related defects.
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