Piezotronic PIN diode for microwave and piezophototronic devices
TL;DR: In this article, the theoretical calculations of the piezotronic PIN diode, including the built-inpotential, current-voltage characteristic, and junction capacitance for microwave and radio frequency application are presented.
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Abstract: Piezotronics and piezophototronics, the two emerging fields that combine piezoelectric and semiconductor properties of materials have drawn much attention recently. Piezopotential caused by piezocharges can change the energy band and carrier transport of piezoelectric semiconductor materials. The PIN diodes have been widely used in high-frequency microwave circuits. In this paper, we present the theoretical calculations of the piezotronic PIN diode, including the built-inpotential, current-voltage characteristic, and junction capacitance for microwave and radio frequency application. Furthermore, the photovoltaic and luminescence properties of the PIN piezophototronic photodetector and light-emitting diode have been provided under applied strain.
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Citations
Theory of piezotronics and piezo-phototronics
TL;DR: In this article, a strain-induced piezoelectric field at a junction, contact, or interface can significantly modulate the carrier generation, recombination, and transport properties.
74
Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes.
TL;DR: This work demonstrates that electron transport of an individual ZnO nanowire-based device with the two same electrodes can be controllably modulated by applying a relatively large uni-/bidirectional bias, providing a new route to tune electrical properties of nanostructures, which may inspire the development of novel electronic and optoelectronic devices.
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High performance piezotronic devices based on non-uniform strain
Yaming Zhang,Gongwei Hu,Yan Zhang,Yan Zhang,Lucy Li,Morten Willatzen,Zhong Lin Wang,Zhong Lin Wang +7 more
TL;DR: In this article, a model that a mechanical stress is gradient distributed along a piezoelectric-semiconductor material was proposed, and the electric properties of piezotronic p-n junction with non-uniform strain was simulated by using the finite element method, including the currentvoltage characteristics and carrier concentration.
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Two-dimensional electron gas in piezotronic devices
TL;DR: In this paper, the authors theoretically investigate the piezoelectric field effect on two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure by employing an approximate triangular potential model.
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Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN
TL;DR: Researchers developed self-powered deep ultraviolet photodetectors using Ga2O3 epitaxial films on p-GaN, achieving optimal performance with a 30 nm i-Ga2O3 layer, exhibiting high photoresponsivity, detectability, and fast response time under UV-light illumination.
9
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Horn-Sen Tzou,C.I. Tseng +1 more
TL;DR: In this paper, a new structure (shell or plate) containing an integrated distributed piezoelectric sensor and actuator is proposed, where the distributed sensing layer monitors the structural oscillation due to the direct PDE and the distributed actuator layer suppresses the oscillation via the converse PDE.
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