Perspective—Opportunities and Future Directions for Ga2O3

TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.

TL;DR: In this paper, the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and the chemistry of defects and impurity doping is provided.

TL;DR: In this paper, the authors provide a review on Ga2O3-based optoelectronics, with a detailed introduction of the phosphors and EL devices and a concise summary of solar-blind photodetectors.

TL;DR: In this paper, a review of β-Ga2O3 at the research level that spans from the material preparation through characterization to final devices is presented, including material preparation (bulk crystals, epi-layers, surfaces), an exploration of optical, electrical, thermal and mechanical properties, as well as device design / fabrication with resulted functionality suitable for different fields of applications.

TL;DR: In this paper, it is demonstrated that nanomembranes of the widebandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform.

TL;DR: In this paper, a donor doping technique for β-Ga2O3 by using Si-ion (Si+) implantation was developed, which achieved a high activation efficiency of above 60% after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900-1000 °C.

TL;DR: In this article, depletion mode field-plated Ga2O3 metal-oxide-semiconductor field effect transistors were demonstrated for the first time, and the transistors exhibited an off-state breakdown voltage of 755 V, a high drain current on/off ratio of over $10^{9}$, and stable high temperature operation against 300°C thermal stress.

Abstract: We studied the growth of Si-and Sn-doped homoepitaxial β -Ga 2 O 3 layers on (010)-oriented substrates by metal organic vapor phase epitaxy (MOVPE). At optimal growth conditions (850 ◦ C, 5 mbar) the layers were smooth with RMS roughness values of ∼ 600 pm. A microstructural study by transmission electron microscopy (TEM) revealed a very high crystalline perfection of the layers. No dislocations or planar defects were observed within the field of view of TEM. Using Si as dopant, the free electron concentration could be varied in a range between 1 × 10 17 and 8 × 10 19 cm − 3 , while with Sn the doping range was restricted to 4 × 10 17 − 1 × 10 19 cm − 3 . This was explained by a pronounced Sn memory effect in the MOVPE reactor that hampers achieving low carrier densities and by incorporation issues that limit the doping efficiency at high Sn doping levels. The electron mobility for a given doping density increased from ∼ 50 cm 2 /Vs for n = 8 × 10 19 cm − 3 to ∼ 130 cm 2 /Vs for n = 1 × 10 17 cm − 3 independently of the dopant. These values match the best literature data relative to β -Ga 2 O 3 bulk crystals and layers grown by molecular beam epitaxy, setting a new standard for MOVPE-grown layers. © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which