Journal Article10.1016/J.JALLCOM.2010.05.148
p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy
W. Liu,B. Yao,Yongfeng Li,Bo-Tao Li,Z.Z. Zhang,Chongxin Shan,Junrong Zhang,D.Z. Shen,X.W. Fan +8 more
20
TL;DR: In this paper, the effects of the Zn3N2 layer on the formation and properties of the p-type δ-doped MgZnO:N is discussed.
read more
About: This article is published in Journal of Alloys and Compounds. The article was published on 20 Aug 2010.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Bandgap tuning of MgZnO in flexible transparent n + -ZnO:Al/n-MgZnO/p-CuAlOx:Ca diodes on polyethylene terephthalate substrates
TL;DR: In this article, a transparent p-n heterojunctions composed of p-type CuAlOx:Ca and n-type MgZnO thin films are fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature without additional heat treatment.
33
A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates
Yongfeng Li,Yongfeng Li,Bin Yao,Bin Yao,Rui Deng,Binghui Li,Zhenzhong Zhang,Chongxin Shan,Dongxu Zhao,Dezhen Shen +9 more
TL;DR: In this paper, the electroluminescence performance of asymmetric Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunctions was investigated.
32
Energy gaps in nitrogen delta-doping graphene: A first-principles study
TL;DR: In this article, the modulation of energy gaps in nitrogen delta-doping (N δ)-doping) graphene and armchair-edge graphene nanoribbons (AGNRs) was investigated.
30
Enhancement of p-type conduction in Ag-doped ZnO thin films via Mg alloying: The role of oxygen vacancy
TL;DR: In this article, a comparative study of p-type ZnO:Ag and ZnMgO-Ag films using photoluminescence and x-ray photoelectron spectroscopy measurements was conducted.
28
N-doped MgZnO alloy thin film prepared by sol–gel method
TL;DR: In this article, nitrogen-doped MgZnO thin films were deposited on glass substrate by spin-coating technique and thermal annealing treatment, and X-ray diffraction (XRD), scanning electron microscope (SEM) and optical transmission measurement were carried out to investigate the effect of growth temperature and nitrogen doping on the physical and optical properties of the films.
13
References
Recent Advances in ZnO Materials and Devices
TL;DR: Wurtzitic ZnO is a widebandgap semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films as discussed by the authors.
2.8K
Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
TL;DR: In this article, room-temperature ultraviolet (UV) laser emission of ZnO microcrystallite thin films is reported, which represents an important step towards the development of nanometer photoelectronics.
MgxZn1−xO as a II–VI widegap semiconductor alloy
Akira Ohtomo,Megumi Kawasaki,Takashi Koida,K. Masubuchi,Hideomi Koinuma,Y. Sakurai,Yasuhiko Yoshida,Tadashi Yasuda,Yusaburo Segawa +8 more
TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
p-type behavior in phosphorus-doped (Zn,Mg)O device structures
TL;DR: The characteristics of device structures that employ phosphorus-doped (Zn,Mg)O have been examined in an effort to delineate the carrier type behavior in this material as mentioned in this paper.
204
Codoping for the fabrication of p-type ZnO
TL;DR: In this paper, a codoping method using acceptors and donors simultaneously in order to solve the crucial doping problem of wideband-gap semiconductor, ZnO, was proposed.
170