Journal Article10.1016/J.COMMATSCI.2004.02.024
Overcoming the doping bottleneck in semiconductors
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TL;DR: In this paper, the authors have studied the chemical trends of defect formation and ionization in semiconductors to understand the physical origin of the doping difficulty, and discussed some of the computational issues in defect calculations.
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About: This article is published in Computational Materials Science. The article was published on 01 Aug 2004. The article focuses on the topics: Charge carrier.
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Citations
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TL;DR: One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy, explaining a persistent photoconductivity above 400 K.
Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe
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Intrinsic defects in gallium sulfide monolayer: a first-principles study
TL;DR: In this article, the electronic and magnetic properties of point defects, including vacancies (VGa and VS), antisites (GaS and SGa) and interstitials (Gai and Si) in monolayer and bulk GaS, were systemically studied using the density functional theory method.
29
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