Journal Article10.1016/J.COMMATSCI.2004.02.024
Overcoming the doping bottleneck in semiconductors
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TL;DR: In this paper, the authors have studied the chemical trends of defect formation and ionization in semiconductors to understand the physical origin of the doping difficulty, and discussed some of the computational issues in defect calculations.
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About: This article is published in Computational Materials Science. The article was published on 01 Aug 2004. The article focuses on the topics: Charge carrier.
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Citations
Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition
Mamoru Ishizawa,Yuki Yasuzato,Hiroyuki Fujishiro,Tomoyuki Naito,Hirokazu Katsui,Takashi Goto +5 more
TL;DR: In this article, the authors have fabricated the BiCuSeO bulks using raw materials with Bi or Se deficiencies in the nominal composition and investigated crystallographic, chemical compositional, and thermoelectric properties.
Co-engineering of tellurium doping and strain modulation for effective p-type achieve in β-Ga2O3
Wenyong Feng,Paiwen Fang,Yiming Zhang,Yuanlin Liu,Jun Liang,Lin Zedong,Yanli Pei +6 more
Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics
Yuanchao Huang,Xuanyu Jiang,Tianqi Deng,Deren Yang,X. Pi +4 more
TL;DR: Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics. The charge states of carbon vacancies in 4H-SiC are identified using ab initio metadynamics. The results reveal negative-U and positive-U ordering for Z1/EH6 and Z2/EH7, respectively.
The tunable bandgap effect of SnS films.
TL;DR: Two-dimensional (2D) SnS has attracted much attention as a phosphorene analogue due to the promising applications in next-generation nanoelectronic and photovoltaic devices and the carrier mobility in plane of SnS films has a character of strong anisotropy and the electron mobility is very high in y direction.
Clarifying the atomic origin of electron killers in β-Ga2O3 from the first-principles study of electron capture rates
TL;DR: In this article , a comparison of theoretically predicted electron capture cross-sections of suggested candidates, Ti and Fe substituting Ga on a tetrahedral site (TiGaI and FeGaI) and an octahedral site(TiGaII and FeFeGaII), to experimentally measured results was made.
References
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