Journal Article10.1002/ADMA.200903193
Organic semiconductor growth and morphology considerations for organic thin-film transistors.
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TL;DR: The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species and the patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere.
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Abstract: Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.
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Interfacial engineering of rubrene thin films with crosslinked polymer layers
Jaemin Im,Hyun-Ho Choi,Jaemin Im,Hyun-Ho Choi +3 more
- 24 Oct 2025
Abstract: Abstract The controlled crystallization of organic semiconductors remains a key challenge for achieving reproducible performance in organic electronic devices. In this study, the influence of polymer interlayers on the polycrystalline growth of organic semiconductors was systematically investigated. Rubrene thin films deposited on UV-modified polystyrene interlayers exhibited spherulitic crystallization, with uniform orthorhombic domains forming exclusively on IPA-rinsed, crosslinked PS (PS-net). Polarized optical microscopy revealed a time-dependent nucleation-and-growth mechanism, while temperature-dependent studies identified a narrow 170–180 °C window for stabilizing orthorhombic domains. Surface morphology and surface energy analyses indicated that roughness and interfacial energy contribute partially, but cannot fully account for the observed crystallization behavior. Differential scanning calorimetry and solubility tests suggested that the thermal dynamics of the interlayer and the removal of chain-scission fragments play critical roles in enabling molecular diffusion and ordering. Taken together, these findings provide new insights into how polymer interlayers can be engineered to direct the crystallization pathways of small-molecule semiconductors, offering valuable guidance for the rational design of organic electronic materials. Graphical abstract Schematic illustration of rubrene film morphology on different polymer interlayers: amorphous rubrene on pristine PS (left) and well-developed spherulitic domains on crosslinked PS-net (right), highlighting the critical role of polymer interfacial structure in directing molecular crystallization.
References
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