Optimization of annealing to decrease quantity of radiation defects in a bipolar transistor
TL;DR: In this article, the possibility of decreasing the quantity of radiation defects by choosing regimes of annealing was analyzed, and it has been shown that manufacturing of diffusive and implanted-junction bipolar transistors in semiconductor heterostructure gives the possibility to increase compactness of dopant distributions.
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Abstract: It has recently been shown that manufacturing of diffusive- and implanted-junction bipolar transistors in semiconductor heterostructure and optimization of annealing give us possibility to increase compactness of dopant distributions. In this paper, we analyze the possibility of decreasing the quantity of radiation defects by choosing regimes of annealing.
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References
Point defects and dopant diffusion in silicon
TL;DR: In this paper, the authors present the current state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion.
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Redistribution of dopant during microwave annealing of a multilayer structure for production p−n junction
TL;DR: In this paper, the dopant redistribution in a multilayer structure during microwave annealing for production of p−n junctions has been analyzed and it has been shown that inhomogeneity of the solid-state structure leads to increasing sharpness of the p −n junction and the homogeneity of dopant distribution in doped areas.
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Dynamics of δ-dopant redistribution during heterostructure growth
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Redistribution of dopant, implanted in a multilayer structure for production of a p n-junction, during annealing radiative defects
TL;DR: In this paper, the diffusion coefficient of the dopant was analyzed in a multilayer structure for the production of a p -n -junction during annealing radiative defects, and the analysis was done analytically by using a development of the method of averaging functional correction.
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Analysis of redistribution of radiation defects taking into account diffusion and several secondary processes
TL;DR: In this article, an approximate analytical approach for the description of the evolution of concentration of radiative defects with account diffusion and some secondary processes (recombination of the point defects and generation of divacancies) has been used.
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