Journal Article10.1063/1.1662912
Optical waveguides in GaAs–AlGaAs epitaxial layers
Ralph A. Logan,F. K. Reinhart +1 more
169
TL;DR: In this paper, two types of waveguides formed in AlxGa1−xAs, GaAs, and Alx Ga1 −xAs epitaxial layers are described, where the first consists of long smooth-walled mesas formed by a masking and etching procedure.
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Abstract: Optical transmission properties are described for two types of waveguides formed in AlxGa1−xAs–GaAs–Alx Ga1−xAs epitaxial layers. The first consists of long smooth‐walled mesas formed by a masking and etching procedure and the second are obtained using an additional etching step to selectively etch the GaAs layer. The latter structure is potentially useful in forming active devices such as modulators since this structure is self‐masking for contacting of the top layer by conventional evaporation techniques. The waveguide dimensions are typically 1–30 μm wide, [sine wave] 1 μm thick, and several mm in length. The transmission measurements are quite similar for both types of guides with attenuation as low as [inverted lazy s]2 cm−1 in wide ([inverted lazy s]20 μm) guides but with losses increasing with decreasing width. The loss appears to arise from imperfections and compositional inhomogeneities in the epitaxial layers.
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Citations
Some optical properties of the AlxGa1−xAs alloys system
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TL;DR: In this article, the authors reported a new optical technique for observation of nonequilibrium carrier transport in GaAs with an electron velocity of 4.4×107 cm/sec under appropriate electric field conditions.
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Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructures
D. D. Sell,H. C. Casey +1 more
TL;DR: In this paper, a three-layered AlxGa1−xAs-GaAs-Alx GaAs structure has been used to measure the optical absorption and photoluminescence in thin GaAs layers prepared by liquid phase epitaxy.
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An improved technique for selective etching of GaAs and Ga1−xAlxAs
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