Journal Article10.1063/1.2266994
Optical gain properties of InAs/InAlGaAs/InP quantum dash structures with a spectral gain bandwidth of more than 300 nm
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TL;DR: In this paper, the InP-based quantum dash (QDash) layer structures were used to realize ultrawide-gain bandwidth lasers for applications in the 1.55μm telecommunication range.
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Abstract: The excellent wavelength tuning properties of InP-based quantum dash (QDash) layer structures were used to realize ultrawide-gain bandwidth lasers for applications in the 1.55μm telecommunication range. To expand the attainable gain bandwidth six QDash layers with three different emission wavelengths were combined in a laser structure. Broad area laser evaluation reveals good device performance. Within the optical telecommunication band at 1.55μm a gain bandwidth of more than 300nm could be experimentally confirmed, which is in good quantitative agreement with theoretical predictions by taking into account an inhomogeneous carrier distribution between the different dash layers.
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Citations
Quantum Dashes on InP Substrate for Broadband Emitter Applications
Boon S. Ooi,H. Susanto Djie,Y. Wang,C.L. Tan,James C. M. Hwang,Xiao-Ming Fang,Joel M. Fastenau,Amy W. K. Liu,Gerard Dang,W. Chang +9 more
TL;DR: In this article, the InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications was developed and the two-section superluminescent diodes, with integrated photon absorber slab as lasing suppression section, fabricated on the inAs dash-inwell structure exhibited the close-to-Gaussian emission with a bandwidth (fullwidth at half-maximum) of up to 140 nm at ~ 1.6 mum peak wavelength.
72
Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission
TL;DR: In this article, the authors report on the demonstration of 50 nm broadband stimulated emission from a chirped AlGaInAs barrier thickness multi-stack InAs/InP quantum dash (Qdash) laser.
Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers
Yating Wan,Daehwan Jung,Chen Shang,Noelle Collins,Ian MacFarlane,Justin Norman,Mario Dumont,Arthur C. Gossard,John E. Bowers +8 more
TL;DR: In this article, self-assembled InAs quantum dashes (QDashes) are used to enable both complex functionality and economy of scale on a single chip with a small footprint.
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Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55μm
P. Podemski,G. Sęk,Krzysztof Ryczko,Jan Misiewicz,S. Hein,Sven Höfling,A. Forchel,Gilles Patriarche +7 more
TL;DR: In this paper, the optical properties of columnar quantum dashes are investigated by photoreflectance and photoluminescence and analyzed by comparison with effective mass calculations.
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Quantum dots semiconductor optical amplifier with a-3dB bandwidth of up to 120 nm in semi-cooled operation
Romain Brenot,Francois Lelarge,O. Legouezigou,Frederic Pommereau,Francis Poingt,L. Legouezigou,Estelle Derouin,Olivier Drisse,B. Rousseau,F. Martin,G-H Duan +10 more
- 24 Feb 2008
TL;DR: More than 120 nm of -3 dB optical bandwidth, together with 10 dB of internal gain at 50°C, is demonstrated and explained with specially designed quantum dot semiconductor optical amplifiers.
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References
Room-temperature operation of InAs quantum-dash lasers on InP [001]
TL;DR: In this paper, the first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates were reported, with wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm2 for singlestack uncoated lasers, and a distinctly quantumwire-like dependence of the threshold current on the laser cavity orientation.
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Gain spectra measurements by a variable stripe length method with current injection
A. Oster,G. Erbert,Hans Wenzel +2 more
TL;DR: In this article, the amplified spontaneous emission is measured and spectrally resolved in both TE and TM polarisations; it is dependent on the current injected into the contact stripes of variable length on the laser structures.
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Numerical modeling of the emission characteristics of semiconductor quantum dash materials for lasers and optical amplifiers
TL;DR: In this paper, a simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-towidth and width-to-height ratios of the dash size and by a wide spreading of the Dash dimensions, is presented.
Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifier
R. Alizon,D. Hadass,Vissarion Mikhelashvili,Gadi Eisenstein,R. Schwertberger,A. Somers,J.P. Reithmaier,Alfred Forchel,Michel Calligaro,Shailendra Bansropun,Michel Krakowski +10 more
TL;DR: In this article, a wide band, high saturation power InAs/InP 1550 nm quantum dash optical amplifier is presented, and the dependence of crosstalk in multi-wavelength amplification on bit rate, power and channel detuning is studied.
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InAs/InP 1550 nm quantum dash semiconductor optical amplifiers
A. Bilenca,R. Alizon,Vissarion Mikhelashvili,Gadi Eisenstein,R. Schwertberger,D. Gold,Johann Peter Reithmaier,Alfred Forchel +7 more
TL;DR: In this paper, quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years and are expected to play a major role in future fiber optics systems and networks.
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