Nonvolatile memory with modulated error correction coding

TL;DR: In this article, initial reliability metrics, such as logarithmic likelihood ratios, are used in decoding sensed states of a set of non-volatile storage elements in order to adjust the reliability metrics for bits in code words which represent the sensed state.

TL;DR: In a nonvolatile memory system, data is read from a memory array and used to obtain likelihood values, which are then provided to a soft-input soft-output decoder as discussed by the authors.

TL;DR: In this paper, an ECC controller for a flash memory device storing M-bit data (M: a positive integer equal to or greater than 2) includes an encoder and a decoder.

TL;DR: In this article, the reliability metrics are used in decoding read data of a set of non-volatile storage elements and the decoding attempts to converge by adjusting the reliability metric for bits in code words which represent the sensed state.

TL;DR: In this article, the read, write and erase of EEprom memory enable nonvolatile multi-state memory to operate with enhanced performance over an extended period of time by using a set of reference cells which closely track and make adjustment for the variations presented by memory cells.

TL;DR: In this article, the memory array is read with high fidelity, not to provide actual final digital data, but rather to provide raw data accurately reflecting the analog storage state, which information is sent to a memory controller for analysis and detection of the actual digital data.

TL;DR: A semiconductor memory device comprises a memory cell array having electrically erasable and programmable memory cells arranged in rows and columns, each memory cell capable of storing n-value data (n is 3 or a greater natural number) and a data circuit having m latch circuits for holding data items read from said memory cells.

TL;DR: In this article, an EEPROM has a memory cell array in which electrically programmable memory cells are arranged in a matrix and each memory cells has three storage states, including a plurality of data circuits for temporarily storing data for controlling write operation states of the plurality of memory cells, a write circuit for performing a write operation in accordance with the contents of the data circuits respectively corresponding to the memory cells.