Patent
Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device
Jaeho Lee,Haeryong Kim,Sanghyun Jo,Hyeon-Jin Shin +3 more
- 13 Dec 2018
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TL;DR: In this paper, a non-volatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element.
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Abstract: Provided are nonvolatile memory devices including 2-dimensional (2D) material and apparatuses including the nonvolatile memory devices. A nonvolatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element. The plurality of charge storage layers may include a 2D material. An interlayer barrier layer may be further provided between the plurality of charge storage layers. The nonvolatile memory device may have a multi-bit or multi-level memory characteristic due to the plurality of charge storage layers.
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Citations
Patent
Dual oxide analog switch for neuromorphic switching
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- 17 Dec 2020
TL;DR: In this paper, the authors propose a semiconductor structure for neuromorphic applications that consists of a first layer overlying a substrate material and a second layer disposed adjacent the first layer.
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Hong-Jyh Li,Mark I. Gardner +1 more
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Nguyen Duc Bui
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TL;DR: In this article, the authors propose to form oxide layers at a thickness greater than the design rule by employing a relatively high dielectric constant material for the oxide layer or layers, such as aluminum oxide, titanium oxide or tantalum oxide.
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TL;DR: In this paper, a large area, high pixel density solid state radiation detector with a real-time and a non-destructive readout is presented. But the detector does not have the capability of providing electronic readout from each FET.
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TL;DR: In this article, a MOS semiconductor memory device that achieves high-speed data write performance, low-power operation performance, and high reliability is presented. But the authors focus on the data retention characteristics of the memory.
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